Experimental study of defect formations in gaas devices using gain, photoluminescence and deep level transient spectroscopy

E. Bielejec; G. Vizkelethy; R. M. Fleming; D. K. Serkland; J. K. McDonald; G. A. Patrizi; D. B. King

doi:10.1109/TNS.2012.2230646

Experimental study of defect formations in gaas devices using gain, photoluminescence and deep level transient spectroscopy

E. Bielejec
, G. Vizkelethy
, R. M. Fleming
, D. K. Serkland
, J. K. McDonald
, G. A. Patrizi
, D. B. King

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We present an experimental methodology developed to probe the clustered defect formation in GaAs devices under both neutron and ion irradiations. The strengths, limitations, and path forward to gather structural defect information will be addressed. © 1963-2012 IEEE.

Original language	English
Pages (from-to)	219-223
Number of pages	5
Journal	IEEE Transactions on Nuclear Science
Volume	60
Issue number	1
DOIs	https://doi.org/10.1109/TNS.2012.2230646
State	Published - Jan 30 2013
Externally published	Yes

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title = "Experimental study of defect formations in gaas devices using gain, photoluminescence and deep level transient spectroscopy",

abstract = "We present an experimental methodology developed to probe the clustered defect formation in GaAs devices under both neutron and ion irradiations. The strengths, limitations, and path forward to gather structural defect information will be addressed. {\textcopyright} 1963-2012 IEEE.",

author = "E. Bielejec and G. Vizkelethy and Fleming, \{R. M.\} and Serkland, \{D. K.\} and McDonald, \{J. K.\} and Patrizi, \{G. A.\} and King, \{D. B.\}",

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doi = "10.1109/TNS.2012.2230646",

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T1 - Experimental study of defect formations in gaas devices using gain, photoluminescence and deep level transient spectroscopy

AU - Bielejec, E.

AU - Vizkelethy, G.

AU - Fleming, R. M.

AU - Serkland, D. K.

AU - McDonald, J. K.

AU - Patrizi, G. A.

AU - King, D. B.

PY - 2013/1/30

Y1 - 2013/1/30

N2 - We present an experimental methodology developed to probe the clustered defect formation in GaAs devices under both neutron and ion irradiations. The strengths, limitations, and path forward to gather structural defect information will be addressed. © 1963-2012 IEEE.

AB - We present an experimental methodology developed to probe the clustered defect formation in GaAs devices under both neutron and ion irradiations. The strengths, limitations, and path forward to gather structural defect information will be addressed. © 1963-2012 IEEE.

UR - https://www.scopus.com/pages/publications/84873738287

U2 - 10.1109/TNS.2012.2230646

DO - 10.1109/TNS.2012.2230646

M3 - Article

SN - 0018-9499

VL - 60

SP - 219

EP - 223

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

IS - 1

ER -

Experimental study of defect formations in gaas devices using gain, photoluminescence and deep level transient spectroscopy

Abstract

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