Abstract
RF glow discharge deposited hydrogenated amorphous silicon films containing silicon nanocrystalline inclusions (a/nc-Si:H) films are investigated as a function of a thermal gradient applied across the silane plasma during film growth. The a/nc-Si:H films are synthesized from hydrogen-diluted silane plasmas when a capacitively-coupled plasma enhanced chemical vapor deposition reactor is operated at high gas chamber pressures. Plasma diagnostics and transmission electron microscopy image analysis of films deposited with and without a thermal gradient suggest that nanoparticle formation occurs within the plasma, rather than resulting from solid-state nucleation at the growing film surface. © 2005 Materials Research Society.
| Original language | English |
|---|---|
| Title of host publication | Materials Research Society Symposium Proceedings |
| Pages | 313-318 |
| Number of pages | 6 |
| Volume | 862 |
| DOIs | |
| State | Published - Jan 1 2005 |
| Externally published | Yes |
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