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Extrinsic Dissociation of a Dislocation in GaAs in the Presence of Point Defects

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Abstract

The dissociation of a screw dislocation segment into three partial dislocations in GaAs is reported. The observation is explained by the formation and dissociation of a vacancy or an interstitial 60° diple at the core of one of the 30° partial dislocations of the dissociated screw dislocation. This leads then to the extrinsic dissociation of the extended dislocation. An alternative explanation that involves a Frank dislocation dipole rather than the 60° dipole is also examined. Copyright © 1989 WILEY‐VCH Verlag GmbH & Co. KGaA
Original languageEnglish
Pages (from-to)105-111
Number of pages7
JournalPhysica Status Solidi (A) Applied Research
Volume114
Issue number1
DOIs
StatePublished - Jan 1 1989
Externally publishedYes

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