Fabrication and photoluminescent characteristics of ZnO/Mg0.2 Zn0.8O coaxial nanorod single quantum well structures

Jun Young Bae; Jinkyoung Yoo; Gyu Chul Yi

doi:10.1063/1.2364463

Fabrication and photoluminescent characteristics of ZnO/Mg_0.2 Zn_0.8O coaxial nanorod single quantum well structures

Jun Young Bae
, Jinkyoung Yoo
, Gyu Chul Yi

Research output: Contribution to journal › Article › peer-review

44 Scopus citations

Abstract

The authors report on fabrication and photoluminescent (PL) properties of ZnO Mg0.2 Zn0.8 O coaxial nanorod quantum structures with various quantum well and barrier layer thicknesses. Employing catalyst-free metal-organic vapor-phase epitaxy, coaxial nanorod single quantum well structures were fabricated by the alternate heteroepitaxial growth of ZnO and Mg0.2 Zn0.8 O layers over the entire surfaces of the ZnO nanorods with fine thickness controls of the layers. The quantum confinement effect of carriers in coaxial nanorod quantum structures depends on the Mg0.2 Zn0.8 O quantum barrier layer thickness as well as the thickness of the ZnO quantum well layer. The temperature-dependent PL characteristics of the coaxial nanorod quantum structures are also discussed.

Original language	English
Article number	173114
Journal	Applied Physics Letters
Volume	89
Issue number	17
DOIs	https://doi.org/10.1063/1.2364463
State	Published - Nov 6 2006
Externally published	Yes

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@article{f508ba6eee004ed79a6e3ca013c35afa,

title = "Fabrication and photoluminescent characteristics of ZnO/Mg0.2 Zn0.8O coaxial nanorod single quantum well structures",

abstract = "The authors report on fabrication and photoluminescent (PL) properties of ZnO Mg0.2 Zn0.8 O coaxial nanorod quantum structures with various quantum well and barrier layer thicknesses. Employing catalyst-free metal-organic vapor-phase epitaxy, coaxial nanorod single quantum well structures were fabricated by the alternate heteroepitaxial growth of ZnO and Mg0.2 Zn0.8 O layers over the entire surfaces of the ZnO nanorods with fine thickness controls of the layers. The quantum confinement effect of carriers in coaxial nanorod quantum structures depends on the Mg0.2 Zn0.8 O quantum barrier layer thickness as well as the thickness of the ZnO quantum well layer. The temperature-dependent PL characteristics of the coaxial nanorod quantum structures are also discussed.",

author = "Bae, \{Jun Young\} and Jinkyoung Yoo and Yi, \{Gyu Chul\}",

year = "2006",

month = nov,

day = "6",

doi = "10.1063/1.2364463",

language = "English",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "17",

}

TY - JOUR

T1 - Fabrication and photoluminescent characteristics of ZnO/Mg0.2 Zn0.8O coaxial nanorod single quantum well structures

AU - Bae, Jun Young

AU - Yoo, Jinkyoung

AU - Yi, Gyu Chul

PY - 2006/11/6

Y1 - 2006/11/6

N2 - The authors report on fabrication and photoluminescent (PL) properties of ZnO Mg0.2 Zn0.8 O coaxial nanorod quantum structures with various quantum well and barrier layer thicknesses. Employing catalyst-free metal-organic vapor-phase epitaxy, coaxial nanorod single quantum well structures were fabricated by the alternate heteroepitaxial growth of ZnO and Mg0.2 Zn0.8 O layers over the entire surfaces of the ZnO nanorods with fine thickness controls of the layers. The quantum confinement effect of carriers in coaxial nanorod quantum structures depends on the Mg0.2 Zn0.8 O quantum barrier layer thickness as well as the thickness of the ZnO quantum well layer. The temperature-dependent PL characteristics of the coaxial nanorod quantum structures are also discussed.

AB - The authors report on fabrication and photoluminescent (PL) properties of ZnO Mg0.2 Zn0.8 O coaxial nanorod quantum structures with various quantum well and barrier layer thicknesses. Employing catalyst-free metal-organic vapor-phase epitaxy, coaxial nanorod single quantum well structures were fabricated by the alternate heteroepitaxial growth of ZnO and Mg0.2 Zn0.8 O layers over the entire surfaces of the ZnO nanorods with fine thickness controls of the layers. The quantum confinement effect of carriers in coaxial nanorod quantum structures depends on the Mg0.2 Zn0.8 O quantum barrier layer thickness as well as the thickness of the ZnO quantum well layer. The temperature-dependent PL characteristics of the coaxial nanorod quantum structures are also discussed.

UR - https://www.scopus.com/pages/publications/33750479830

U2 - 10.1063/1.2364463

DO - 10.1063/1.2364463

M3 - Article

SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

M1 - 173114

ER -

Fabrication and photoluminescent characteristics of ZnO/Mg0.2 Zn0.8O coaxial nanorod single quantum well structures

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Fabrication and photoluminescent characteristics of ZnO/Mg_0.2 Zn_0.8O coaxial nanorod single quantum well structures