Far infrared edge photoresponse and persistent edge transport in an inverted InAs/GaSb heterostructure

G. C. Dyer; X. Shi; B. V. Olson; S. D. Hawkins; J. F. Klem; E. A. Shaner; W. Pan

doi:10.1063/1.4939234

Far infrared edge photoresponse and persistent edge transport in an inverted InAs/GaSb heterostructure

G. C. Dyer
, X. Shi
, B. V. Olson
, S. D. Hawkins
, J. F. Klem
, E. A. Shaner
, W. Pan

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Direct current (DC) transport and far infrared photoresponse were studied an InAs/GaSb double quantum well with an inverted band structure. The DC transport depends systematically upon the DC bias configuration and operating temperature. Surprisingly, it reveals robust edge conduction despite prevalent bulk transport in our device of macroscopic size. Under 180 GHz far infrared illumination at oblique incidence, we measured a strong photovoltaic response. We conclude that quantum spin Hall edge transport produces the observed transverse photovoltages. Overall, our experimental results support a hypothesis that the photoresponse arises from direct coupling of the incident radiation field to edge states.

Original language	English
Article number	013106
Journal	Applied Physics Letters
Volume	108
Issue number	1
DOIs	https://doi.org/10.1063/1.4939234
State	Published - Jan 4 2016
Externally published	Yes

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title = "Far infrared edge photoresponse and persistent edge transport in an inverted InAs/GaSb heterostructure",

abstract = "Direct current (DC) transport and far infrared photoresponse were studied an InAs/GaSb double quantum well with an inverted band structure. The DC transport depends systematically upon the DC bias configuration and operating temperature. Surprisingly, it reveals robust edge conduction despite prevalent bulk transport in our device of macroscopic size. Under 180 GHz far infrared illumination at oblique incidence, we measured a strong photovoltaic response. We conclude that quantum spin Hall edge transport produces the observed transverse photovoltages. Overall, our experimental results support a hypothesis that the photoresponse arises from direct coupling of the incident radiation field to edge states.",

author = "Dyer, \{G. C.\} and X. Shi and Olson, \{B. V.\} and Hawkins, \{S. D.\} and Klem, \{J. F.\} and Shaner, \{E. A.\} and W. Pan",

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doi = "10.1063/1.4939234",

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T1 - Far infrared edge photoresponse and persistent edge transport in an inverted InAs/GaSb heterostructure

AU - Dyer, G. C.

AU - Shi, X.

AU - Olson, B. V.

AU - Hawkins, S. D.

AU - Klem, J. F.

AU - Shaner, E. A.

AU - Pan, W.

PY - 2016/1/4

Y1 - 2016/1/4

N2 - Direct current (DC) transport and far infrared photoresponse were studied an InAs/GaSb double quantum well with an inverted band structure. The DC transport depends systematically upon the DC bias configuration and operating temperature. Surprisingly, it reveals robust edge conduction despite prevalent bulk transport in our device of macroscopic size. Under 180 GHz far infrared illumination at oblique incidence, we measured a strong photovoltaic response. We conclude that quantum spin Hall edge transport produces the observed transverse photovoltages. Overall, our experimental results support a hypothesis that the photoresponse arises from direct coupling of the incident radiation field to edge states.

AB - Direct current (DC) transport and far infrared photoresponse were studied an InAs/GaSb double quantum well with an inverted band structure. The DC transport depends systematically upon the DC bias configuration and operating temperature. Surprisingly, it reveals robust edge conduction despite prevalent bulk transport in our device of macroscopic size. Under 180 GHz far infrared illumination at oblique incidence, we measured a strong photovoltaic response. We conclude that quantum spin Hall edge transport produces the observed transverse photovoltages. Overall, our experimental results support a hypothesis that the photoresponse arises from direct coupling of the incident radiation field to edge states.

UR - https://www.scopus.com/pages/publications/84954158052

U2 - 10.1063/1.4939234

DO - 10.1063/1.4939234

M3 - Article

AN - SCOPUS:84954158052

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VL - 108

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

M1 - 013106

ER -

Far infrared edge photoresponse and persistent edge transport in an inverted InAs/GaSb heterostructure

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