Faulted dipoles in GaAs

B. C. De Cooman; C. B. Carter

doi:10.1063/1.98120

Faulted dipoles in GaAs

B. C. De Cooman
, C. B. Carter

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

Faulted dipoles in GaAs have been directly imaged by high-resolution transmission electron microscopy. The dislocation dipoles were introduced into the GaAs by deforming a sample in compression along a 〈110〉 axis. Both the Z character of the dipole and the intrinsic nature of the stacking faults could be determined directly from the high-resolution images. Using convergent-beam electron diffraction, it has been shown that it is possible to determine the polarity of the sample and thereby to differentiate between the α and β partial dislocations.

Original language	English
Pages (from-to)	40-42
Number of pages	3
Journal	Applied Physics Letters
Volume	50
Issue number	1
DOIs	https://doi.org/10.1063/1.98120
State	Published - Dec 1 1987
Externally published	Yes

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title = "Faulted dipoles in GaAs",

abstract = "Faulted dipoles in GaAs have been directly imaged by high-resolution transmission electron microscopy. The dislocation dipoles were introduced into the GaAs by deforming a sample in compression along a 〈110〉 axis. Both the Z character of the dipole and the intrinsic nature of the stacking faults could be determined directly from the high-resolution images. Using convergent-beam electron diffraction, it has been shown that it is possible to determine the polarity of the sample and thereby to differentiate between the α and β partial dislocations.",

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AU - Carter, C. B.

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N2 - Faulted dipoles in GaAs have been directly imaged by high-resolution transmission electron microscopy. The dislocation dipoles were introduced into the GaAs by deforming a sample in compression along a 〈110〉 axis. Both the Z character of the dipole and the intrinsic nature of the stacking faults could be determined directly from the high-resolution images. Using convergent-beam electron diffraction, it has been shown that it is possible to determine the polarity of the sample and thereby to differentiate between the α and β partial dislocations.

AB - Faulted dipoles in GaAs have been directly imaged by high-resolution transmission electron microscopy. The dislocation dipoles were introduced into the GaAs by deforming a sample in compression along a 〈110〉 axis. Both the Z character of the dipole and the intrinsic nature of the stacking faults could be determined directly from the high-resolution images. Using convergent-beam electron diffraction, it has been shown that it is possible to determine the polarity of the sample and thereby to differentiate between the α and β partial dislocations.

UR - https://www.scopus.com/pages/publications/0004741006

U2 - 10.1063/1.98120

DO - 10.1063/1.98120

M3 - Article

SN - 0003-6951

VL - 50

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EP - 42

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

ER -

Faulted dipoles in GaAs

Abstract

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