Abstract
Faulted dipoles ranging in height from 3 to 12 nm in high-purity Ge have been studied by lattice-fringe and weak-beam transmission electron microscopy techniques. Only intrinsic, Z-shape faulted dipoles were observed. Lattice-fringe images of large faulted dipoles, weak-beam images of faulted dipoles, and weak-beam images of near-edge dislocations yield stacking-fault energies of 78 plus or minus 7, less than equivalent to 82 and 74 plus or minus 14 mJ m** minus **2, respectively. When determined from the height and width of faulted dipoles viewed end-on in lattice-fringe images, the value for the stacking-fault energy calculated from anisotropic elasticity theory increases from 78 to 160 mJ m** minus **2 as the height decreases from 6 to 3 nm.
| Original language | English |
|---|---|
| Pages (from-to) | 204-232 |
| Number of pages | 29 |
| Journal | Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties |
| Volume | 42 |
| Issue number | 1 |
| State | Published - Jan 1 1980 |
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