Few-hole double quantum dot in an undoped GaAs/AlGaAs heterostructure

L. A. Tracy; T. W. Hargett; J. L. Reno

doi:10.1063/1.4868971

Few-hole double quantum dot in an undoped GaAs/AlGaAs heterostructure

L. A. Tracy
, T. W. Hargett
, J. L. Reno

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

We demonstrate a hole double quantum dot in an undoped GaAs/AlGaAs heterostructure. The interdot coupling can be tuned over a wide range, from formation of a large single dot to two well-isolated quantum dots. Using charge sensing, we show the ability to completely empty the dot of holes and control the charge occupation in the few-hole regime. The device should allow for control of individual hole spins in single and double quantum dots in GaAs. © 2014 AIP Publishing LLC.

Original language	English
Journal	Applied Physics Letters
Volume	104
Issue number	12
DOIs	https://doi.org/10.1063/1.4868971
State	Published - Mar 24 2014
Externally published	Yes

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title = "Few-hole double quantum dot in an undoped GaAs/AlGaAs heterostructure",

abstract = "We demonstrate a hole double quantum dot in an undoped GaAs/AlGaAs heterostructure. The interdot coupling can be tuned over a wide range, from formation of a large single dot to two well-isolated quantum dots. Using charge sensing, we show the ability to completely empty the dot of holes and control the charge occupation in the few-hole regime. The device should allow for control of individual hole spins in single and double quantum dots in GaAs. {\textcopyright} 2014 AIP Publishing LLC.",

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AU - Hargett, T. W.

AU - Reno, J. L.

PY - 2014/3/24

Y1 - 2014/3/24

N2 - We demonstrate a hole double quantum dot in an undoped GaAs/AlGaAs heterostructure. The interdot coupling can be tuned over a wide range, from formation of a large single dot to two well-isolated quantum dots. Using charge sensing, we show the ability to completely empty the dot of holes and control the charge occupation in the few-hole regime. The device should allow for control of individual hole spins in single and double quantum dots in GaAs. © 2014 AIP Publishing LLC.

AB - We demonstrate a hole double quantum dot in an undoped GaAs/AlGaAs heterostructure. The interdot coupling can be tuned over a wide range, from formation of a large single dot to two well-isolated quantum dots. Using charge sensing, we show the ability to completely empty the dot of holes and control the charge occupation in the few-hole regime. The device should allow for control of individual hole spins in single and double quantum dots in GaAs. © 2014 AIP Publishing LLC.

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U2 - 10.1063/1.4868971

DO - 10.1063/1.4868971

M3 - Article

SN - 0003-6951

VL - 104

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

ER -

Few-hole double quantum dot in an undoped GaAs/AlGaAs heterostructure

Abstract

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