Abstract
A frequency-domain description of semiconductor mode-locked lasers is presented. The approach provides self-consistent accounting of locking mechanism, gain saturation, mode competition and carrier-induced refractive index, in addition to directly connecting mode-locking performance to the bandstructure.
| Original language | English |
|---|---|
| Title of host publication | 2020 IEEE Photonics Conference, IPC 2020 - Proceedings |
| DOIs | |
| State | Published - Sep 1 2020 |
| Externally published | Yes |
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