Gain and carrier-induced refractive index change in group-III nitride quantum wells

W. W. Chow; H. C. Schneider

doi:10.1117/12.467943

Gain and carrier-induced refractive index change in group-III nitride quantum wells

W. W. Chow
, H. C. Schneider

Research output: Contribution to journal › Article › peer-review

Abstract

This paper analyses the gain and carrier-induced refractive index change in group-III nitride quantum wells. An approach based on the semiconductor Bloch equations with carrier-carrier collisions treated at the level of quantum kinetic theory is used. The influences of the strong carrier-carrier Coulomb interaction and the quantum-confined Stark effect on laser threshold and output beam quality are discussed.

Original language	English
Pages (from-to)	11-17
Number of pages	7
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	4651
Issue number	1
DOIs	https://doi.org/10.1117/12.467943
State	Published - May 24 2002
Externally published	Yes

Access to Document

10.1117/12.467943

Cite this

@article{06a6dab57377419f98bc9e526b2ad45d,

title = "Gain and carrier-induced refractive index change in group-III nitride quantum wells",

abstract = "This paper analyses the gain and carrier-induced refractive index change in group-III nitride quantum wells. An approach based on the semiconductor Bloch equations with carrier-carrier collisions treated at the level of quantum kinetic theory is used. The influences of the strong carrier-carrier Coulomb interaction and the quantum-confined Stark effect on laser threshold and output beam quality are discussed.",

author = "Chow, \{W. W.\} and Schneider, \{H. C.\}",

year = "2002",

month = may,

day = "24",

doi = "10.1117/12.467943",

language = "English",

volume = "4651",

pages = "11--17",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

number = "1",

}

TY - JOUR

T1 - Gain and carrier-induced refractive index change in group-III nitride quantum wells

AU - Chow, W. W.

AU - Schneider, H. C.

PY - 2002/5/24

Y1 - 2002/5/24

N2 - This paper analyses the gain and carrier-induced refractive index change in group-III nitride quantum wells. An approach based on the semiconductor Bloch equations with carrier-carrier collisions treated at the level of quantum kinetic theory is used. The influences of the strong carrier-carrier Coulomb interaction and the quantum-confined Stark effect on laser threshold and output beam quality are discussed.

AB - This paper analyses the gain and carrier-induced refractive index change in group-III nitride quantum wells. An approach based on the semiconductor Bloch equations with carrier-carrier collisions treated at the level of quantum kinetic theory is used. The influences of the strong carrier-carrier Coulomb interaction and the quantum-confined Stark effect on laser threshold and output beam quality are discussed.

UR - https://www.scopus.com/pages/publications/0036057162

U2 - 10.1117/12.467943

DO - 10.1117/12.467943

M3 - Article

SN - 0277-786X

VL - 4651

SP - 11

EP - 17

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

IS - 1

ER -

Gain and carrier-induced refractive index change in group-III nitride quantum wells

Abstract

Access to Document

Fingerprint

Cite this