Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300-1550 nm range

C. Schlichenmaier; A. Thränhardt; T. Meier; S. W. Koch; W. W. Chow; J. Hader; J. V. Moloney

doi:10.1063/1.2149371

Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300-1550 nm range

C. Schlichenmaier
, A. Thränhardt
, T. Meier
, S. W. Koch
, W. W. Chow
, J. Hader
, J. V. Moloney

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

A microscopic model is used to analyze gain and loss properties of (GaIn) (NAs) GaAs quantum wells in the 1.3-1.55 μm range, including Auger and radiative recombination. The calculations show that, as long as good material quality can be achieved, growing highly compressively strained samples is preferable due to their specific band structure properties. Optimum laser operation is possible slightly above a peak gain of 1000 cm-1. © 2005 American Institute of Physics.

Original language	English
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	26
DOIs	https://doi.org/10.1063/1.2149371
State	Published - Dec 1 2005
Externally published	Yes

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10.1063/1.2149371

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title = "Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300-1550 nm range",

abstract = "A microscopic model is used to analyze gain and loss properties of (GaIn) (NAs) GaAs quantum wells in the 1.3-1.55 μm range, including Auger and radiative recombination. The calculations show that, as long as good material quality can be achieved, growing highly compressively strained samples is preferable due to their specific band structure properties. Optimum laser operation is possible slightly above a peak gain of 1000 cm-1. {\textcopyright} 2005 American Institute of Physics.",

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AU - Schlichenmaier, C.

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AU - Meier, T.

AU - Koch, S. W.

AU - Chow, W. W.

AU - Hader, J.

AU - Moloney, J. V.

PY - 2005/12/1

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N2 - A microscopic model is used to analyze gain and loss properties of (GaIn) (NAs) GaAs quantum wells in the 1.3-1.55 μm range, including Auger and radiative recombination. The calculations show that, as long as good material quality can be achieved, growing highly compressively strained samples is preferable due to their specific band structure properties. Optimum laser operation is possible slightly above a peak gain of 1000 cm-1. © 2005 American Institute of Physics.

AB - A microscopic model is used to analyze gain and loss properties of (GaIn) (NAs) GaAs quantum wells in the 1.3-1.55 μm range, including Auger and radiative recombination. The calculations show that, as long as good material quality can be achieved, growing highly compressively strained samples is preferable due to their specific band structure properties. Optimum laser operation is possible slightly above a peak gain of 1000 cm-1. © 2005 American Institute of Physics.

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U2 - 10.1063/1.2149371

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SP - 1

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

ER -

Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300-1550 nm range

Abstract

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