Gain and photoluminescence dynamics in dilute nitride semiconductor laser materials

A. Thranhardt; C. Schlichenmaier; S. Becker; K. Hantke; J. D. Heber; W. W. Rühle; S. W. Koch; J. Hader; J. V. Moloney; W. W. Chow

Gain and photoluminescence dynamics in dilute nitride semiconductor laser materials

A. Thranhardt
, C. Schlichenmaier
, S. Becker
, K. Hantke
, J. D. Heber
, W. W. Rühle
, S. W. Koch
, J. Hader
, J. V. Moloney
, W. W. Chow

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The gain and photoluminescence dynamics is calculated microscopically for several GalnNAs structures. Carrier scattering rates are computed microscopically and implemented into a nonequilibrium gain model. © 2004 Optical Society of America.

Original language	English
Title of host publication	Optics InfoBase Conference Papers
State	Published - Jan 1 2005
Externally published	Yes

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@inproceedings{1b70e8cf7a6240f0aa4aa738b993f0c2,

title = "Gain and photoluminescence dynamics in dilute nitride semiconductor laser materials",

abstract = "The gain and photoluminescence dynamics is calculated microscopically for several GalnNAs structures. Carrier scattering rates are computed microscopically and implemented into a nonequilibrium gain model. {\textcopyright} 2004 Optical Society of America.",

author = "A. Thranhardt and C. Schlichenmaier and S. Becker and K. Hantke and Heber, \{J. D.\} and R{\"u}hle, \{W. W.\} and Koch, \{S. W.\} and J. Hader and Moloney, \{J. V.\} and Chow, \{W. W.\}",

year = "2005",

month = jan,

day = "1",

language = "English",

isbn = "1557527709",

booktitle = "Optics InfoBase Conference Papers",

}

TY - GEN

T1 - Gain and photoluminescence dynamics in dilute nitride semiconductor laser materials

AU - Thranhardt, A.

AU - Schlichenmaier, C.

AU - Becker, S.

AU - Hantke, K.

AU - Heber, J. D.

AU - Rühle, W. W.

AU - Koch, S. W.

AU - Hader, J.

AU - Moloney, J. V.

AU - Chow, W. W.

PY - 2005/1/1

Y1 - 2005/1/1

N2 - The gain and photoluminescence dynamics is calculated microscopically for several GalnNAs structures. Carrier scattering rates are computed microscopically and implemented into a nonequilibrium gain model. © 2004 Optical Society of America.

AB - The gain and photoluminescence dynamics is calculated microscopically for several GalnNAs structures. Carrier scattering rates are computed microscopically and implemented into a nonequilibrium gain model. © 2004 Optical Society of America.

UR - https://www.scopus.com/pages/publications/84899147349

M3 - Conference contribution

SN - 1557527709

SN - 9781557527707

BT - Optics InfoBase Conference Papers

ER -

Gain and photoluminescence dynamics in dilute nitride semiconductor laser materials

Abstract

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