Gain Characterization of p-Doped 1.3 μm InAs Quantum Dot Lasers on Silicon: Theory and Experiment

Zeyu Zhang; Daehwan Jung; Justin C. Norman; Pari Patel; Weng W. Chow; John E. Bowers

doi:10.1109/ISLC.2018.8516169

Gain Characterization of p-Doped 1.3 μm InAs Quantum Dot Lasers on Silicon: Theory and Experiment

Zeyu Zhang
, Daehwan Jung
, Justin C. Norman
, Pari Patel
, Weng W. Chow
, John E. Bowers

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We investigate, both experimentally and theoretically, the gain characteristics of modulation p-doped 1.3 μm quantum dot lasers epitaxially grown on silicon. The inhomogeneous broadening is extracted to be 10 meV. A p-doped quantum dot active region has been found to show lower transparency current and higher material gain.

Original language	English
Title of host publication	Conference Digest - IEEE International Semiconductor Laser Conference
Pages	67-68
Number of pages	2
Volume	2018-September
DOIs	https://doi.org/10.1109/ISLC.2018.8516169
State	Published - Oct 30 2018
Externally published	Yes

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title = "Gain Characterization of p-Doped 1.3 μm InAs Quantum Dot Lasers on Silicon: Theory and Experiment",

abstract = "We investigate, both experimentally and theoretically, the gain characteristics of modulation p-doped 1.3 μm quantum dot lasers epitaxially grown on silicon. The inhomogeneous broadening is extracted to be 10 meV. A p-doped quantum dot active region has been found to show lower transparency current and higher material gain.",

author = "Zeyu Zhang and Daehwan Jung and Norman, \{Justin C.\} and Pari Patel and Chow, \{Weng W.\} and Bowers, \{John E.\}",

year = "2018",

month = oct,

day = "30",

doi = "10.1109/ISLC.2018.8516169",

language = "English",

isbn = "9781538664865",

volume = "2018-September",

pages = "67--68",

booktitle = "Conference Digest - IEEE International Semiconductor Laser Conference",

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T1 - Gain Characterization of p-Doped 1.3 μm InAs Quantum Dot Lasers on Silicon: Theory and Experiment

AU - Zhang, Zeyu

AU - Jung, Daehwan

AU - Norman, Justin C.

AU - Patel, Pari

AU - Chow, Weng W.

AU - Bowers, John E.

PY - 2018/10/30

Y1 - 2018/10/30

N2 - We investigate, both experimentally and theoretically, the gain characteristics of modulation p-doped 1.3 μm quantum dot lasers epitaxially grown on silicon. The inhomogeneous broadening is extracted to be 10 meV. A p-doped quantum dot active region has been found to show lower transparency current and higher material gain.

AB - We investigate, both experimentally and theoretically, the gain characteristics of modulation p-doped 1.3 μm quantum dot lasers epitaxially grown on silicon. The inhomogeneous broadening is extracted to be 10 meV. A p-doped quantum dot active region has been found to show lower transparency current and higher material gain.

UR - https://www.scopus.com/pages/publications/85057375298

U2 - 10.1109/ISLC.2018.8516169

DO - 10.1109/ISLC.2018.8516169

M3 - Conference contribution

SN - 9781538664865

VL - 2018-September

SP - 67

EP - 68

BT - Conference Digest - IEEE International Semiconductor Laser Conference

ER -

Gain Characterization of p-Doped 1.3 μm InAs Quantum Dot Lasers on Silicon: Theory and Experiment

Abstract

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