GaInNAs laser gain

W. W. Chow; E. D. Jones; N. A. Modine; S. R. Kurtz; A. A. Allerman

doi:10.1117/12.391408

GaInNAs laser gain

W. W. Chow
, E. D. Jones
, N. A. Modine
, S. R. Kurtz
, A. A. Allerman

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A many-body microscopic theory was used to investigate the gain and threshold current properties of GaInNAs/GaAs quantum wells. The calculations showed gain properties that depend significantly on strain. Some of the strain effects are similar to those in other semiconductor lasers, especially effects arising from modifications to the hole band structure. However, the strain effects arising from conduction band and optical matrix element modifications are unique to the GaInAs/GaAs system. These effects strongly influence the gain vs carrier density and gain vs current density relations.

Original language	English
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Pages	105-109
Number of pages	5
Volume	3944 (I)
DOIs	https://doi.org/10.1117/12.391408
State	Published - Jan 1 2000
Externally published	Yes

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title = "GaInNAs laser gain",

abstract = "A many-body microscopic theory was used to investigate the gain and threshold current properties of GaInNAs/GaAs quantum wells. The calculations showed gain properties that depend significantly on strain. Some of the strain effects are similar to those in other semiconductor lasers, especially effects arising from modifications to the hole band structure. However, the strain effects arising from conduction band and optical matrix element modifications are unique to the GaInAs/GaAs system. These effects strongly influence the gain vs carrier density and gain vs current density relations.",

author = "Chow, \{W. W.\} and Jones, \{E. D.\} and Modine, \{N. A.\} and Kurtz, \{S. R.\} and Allerman, \{A. A.\}",

year = "2000",

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doi = "10.1117/12.391408",

language = "English",

volume = "3944 (I)",

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AU - Chow, W. W.

AU - Jones, E. D.

AU - Modine, N. A.

AU - Kurtz, S. R.

AU - Allerman, A. A.

PY - 2000/1/1

Y1 - 2000/1/1

N2 - A many-body microscopic theory was used to investigate the gain and threshold current properties of GaInNAs/GaAs quantum wells. The calculations showed gain properties that depend significantly on strain. Some of the strain effects are similar to those in other semiconductor lasers, especially effects arising from modifications to the hole band structure. However, the strain effects arising from conduction band and optical matrix element modifications are unique to the GaInAs/GaAs system. These effects strongly influence the gain vs carrier density and gain vs current density relations.

AB - A many-body microscopic theory was used to investigate the gain and threshold current properties of GaInNAs/GaAs quantum wells. The calculations showed gain properties that depend significantly on strain. Some of the strain effects are similar to those in other semiconductor lasers, especially effects arising from modifications to the hole band structure. However, the strain effects arising from conduction band and optical matrix element modifications are unique to the GaInAs/GaAs system. These effects strongly influence the gain vs carrier density and gain vs current density relations.

UR - https://www.scopus.com/pages/publications/0033680804

U2 - 10.1117/12.391408

DO - 10.1117/12.391408

M3 - Conference contribution

VL - 3944 (I)

SP - 105

EP - 109

BT - Proceedings of SPIE - The International Society for Optical Engineering

ER -

GaInNAs laser gain

Abstract

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