GaInN/GaN growth optimization for high-power green light-emitting diodes

C. Wetzel; T. Salagaj; T. Detchprohm; P. Li; J. S. Nelson

doi:10.1063/1.1779960

GaInN/GaN growth optimization for high-power green light-emitting diodes

C. Wetzel
, T. Salagaj
, T. Detchprohm
, P. Li
, J. S. Nelson

Research output: Contribution to journal › Article › peer-review

72 Scopus citations

Abstract

The growth optimization for high-power green light-emitting diodes (LED) was investigated using Ga 1-xIn xN/GaN metalorganic vapor phase epitaxy. An Emcore D-180 Spectra GaN rotating disk multiwafer system was used for growth of LED epiwafers by metalorganic vapor phase epitaxy. An optimization of nitride epitaxy resulted in development of high brightness 525 nm green LED dies after mesa etching, metalization, thinning, separation and mounting on heat sinks. The results show die performance of 2.5 mW at 523 nm for low forward voltages of 3.4 V at typical drive current of 20 mA.

Original language	English
Pages (from-to)	866-868
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	6
DOIs	https://doi.org/10.1063/1.1779960
State	Published - Aug 9 2004
Externally published	Yes

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title = "GaInN/GaN growth optimization for high-power green light-emitting diodes",

abstract = "The growth optimization for high-power green light-emitting diodes (LED) was investigated using Ga 1-xIn xN/GaN metalorganic vapor phase epitaxy. An Emcore D-180 Spectra GaN rotating disk multiwafer system was used for growth of LED epiwafers by metalorganic vapor phase epitaxy. An optimization of nitride epitaxy resulted in development of high brightness 525 nm green LED dies after mesa etching, metalization, thinning, separation and mounting on heat sinks. The results show die performance of 2.5 mW at 523 nm for low forward voltages of 3.4 V at typical drive current of 20 mA.",

author = "C. Wetzel and T. Salagaj and T. Detchprohm and P. Li and Nelson, \{J. S.\}",

year = "2004",

month = aug,

day = "9",

doi = "10.1063/1.1779960",

language = "English",

volume = "85",

pages = "866--868",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - GaInN/GaN growth optimization for high-power green light-emitting diodes

AU - Wetzel, C.

AU - Salagaj, T.

AU - Detchprohm, T.

AU - Li, P.

AU - Nelson, J. S.

PY - 2004/8/9

Y1 - 2004/8/9

N2 - The growth optimization for high-power green light-emitting diodes (LED) was investigated using Ga 1-xIn xN/GaN metalorganic vapor phase epitaxy. An Emcore D-180 Spectra GaN rotating disk multiwafer system was used for growth of LED epiwafers by metalorganic vapor phase epitaxy. An optimization of nitride epitaxy resulted in development of high brightness 525 nm green LED dies after mesa etching, metalization, thinning, separation and mounting on heat sinks. The results show die performance of 2.5 mW at 523 nm for low forward voltages of 3.4 V at typical drive current of 20 mA.

AB - The growth optimization for high-power green light-emitting diodes (LED) was investigated using Ga 1-xIn xN/GaN metalorganic vapor phase epitaxy. An Emcore D-180 Spectra GaN rotating disk multiwafer system was used for growth of LED epiwafers by metalorganic vapor phase epitaxy. An optimization of nitride epitaxy resulted in development of high brightness 525 nm green LED dies after mesa etching, metalization, thinning, separation and mounting on heat sinks. The results show die performance of 2.5 mW at 523 nm for low forward voltages of 3.4 V at typical drive current of 20 mA.

UR - https://www.scopus.com/pages/publications/4344713049

U2 - 10.1063/1.1779960

DO - 10.1063/1.1779960

M3 - Article

SN - 0003-6951

VL - 85

SP - 866

EP - 868

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

ER -

GaInN/GaN growth optimization for high-power green light-emitting diodes

Abstract

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