Abstract
We obtained single-mode lasing in GaN nanowires by using a limited number of cavity modes and a narrow gain spectra. The fabrication was achieved by a top-down technique in high quality GaN films. © OSA 2012.
| Original language | English |
|---|---|
| Title of host publication | CLEO: Science and Innovations, CLEO_SI 2012 |
| DOIs | |
| State | Published - Jan 1 2012 |
| Externally published | Yes |
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