GaN/In_1-xGa_xN/GaN/ZnO nanoarchitecture light emitting diode microarrays

We studied the fabrication and electroluminescent (EL) characteristics of GaN/ In1-x Gax N/GaN/ZnO nanoarchitecture light emitting diode (LED) microarrays consisting of position-controlled GaN/ZnO coaxial nanotube heterostructures. For the fabrication of nanoarchitecture LED arrays, n -GaN, GaN/ In0.24 Ga0.76 N multiquantum well (MQW) structures and p -GaN layers were deposited coaxially over the entire surface of position-controlled ZnO nanotube arrays grown vertically on c -plane sapphire substrates. The nanoarchitecture LEDs exhibited strong green and blue emission from the GaN/GaN/ In0.24 Ga0.76 N MQWs at room temperature. Furthermore, the origins of dominant EL peaks are also discussed.