Gate-tunable metafilm absorber based on indium silicon oxide

Hongwei Zhao; Ran Zhang; Hamid T. Chorsi; Wesley A. Britton; Yuyao Chen; Prasad P. Iyer; Jon A. Schuller; Luca Dal Negro; Jonathan Klamkin

doi:10.1515/nanoph-2019-0190

Gate-tunable metafilm absorber based on indium silicon oxide

Hongwei Zhao
, Ran Zhang
, Hamid T. Chorsi
, Wesley A. Britton
, Yuyao Chen
, Prasad P. Iyer
, Jon A. Schuller
, Luca Dal Negro
, Jonathan Klamkin

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

In this work, reconfigurable metafilm absorbers based on indium silicon oxide (ISO) were investigated. The metafilm absorbers consist of nanoscale metallic resonator arrays on metal-insulator-metal (MIM) multilayer structures. The ISO was used as an active tunable layer embedded in the MIM cavities. The tunable metafilm absorbers with ISO were then fabricated and characterized. A maximum change in the reflectance of 57% and up to 620 nm shift in the resonance wavelength were measured.

Original language	English
Pages (from-to)	1803-1810
Number of pages	8
Journal	Nanophotonics
Volume	8
Issue number	10
DOIs	https://doi.org/10.1515/nanoph-2019-0190
State	Published - Oct 1 2019
Externally published	Yes

Access to Document

10.1515/nanoph-2019-0190

Cite this

@article{a4104ff3a14a411e89f60e4db8ee028e,

title = "Gate-tunable metafilm absorber based on indium silicon oxide",

abstract = "In this work, reconfigurable metafilm absorbers based on indium silicon oxide (ISO) were investigated. The metafilm absorbers consist of nanoscale metallic resonator arrays on metal-insulator-metal (MIM) multilayer structures. The ISO was used as an active tunable layer embedded in the MIM cavities. The tunable metafilm absorbers with ISO were then fabricated and characterized. A maximum change in the reflectance of 57\% and up to 620 nm shift in the resonance wavelength were measured.",

author = "Hongwei Zhao and Ran Zhang and Chorsi, \{Hamid T.\} and Britton, \{Wesley A.\} and Yuyao Chen and Iyer, \{Prasad P.\} and Schuller, \{Jon A.\} and Negro, \{Luca Dal\} and Jonathan Klamkin",

year = "2019",

month = oct,

day = "1",

doi = "10.1515/nanoph-2019-0190",

language = "English",

volume = "8",

pages = "1803--1810",

journal = "Nanophotonics",

issn = "2192-8614",

publisher = "John Wiley and Sons Inc.",

number = "10",

}

TY - JOUR

T1 - Gate-tunable metafilm absorber based on indium silicon oxide

AU - Zhao, Hongwei

AU - Zhang, Ran

AU - Chorsi, Hamid T.

AU - Britton, Wesley A.

AU - Chen, Yuyao

AU - Iyer, Prasad P.

AU - Schuller, Jon A.

AU - Negro, Luca Dal

AU - Klamkin, Jonathan

PY - 2019/10/1

Y1 - 2019/10/1

N2 - In this work, reconfigurable metafilm absorbers based on indium silicon oxide (ISO) were investigated. The metafilm absorbers consist of nanoscale metallic resonator arrays on metal-insulator-metal (MIM) multilayer structures. The ISO was used as an active tunable layer embedded in the MIM cavities. The tunable metafilm absorbers with ISO were then fabricated and characterized. A maximum change in the reflectance of 57% and up to 620 nm shift in the resonance wavelength were measured.

AB - In this work, reconfigurable metafilm absorbers based on indium silicon oxide (ISO) were investigated. The metafilm absorbers consist of nanoscale metallic resonator arrays on metal-insulator-metal (MIM) multilayer structures. The ISO was used as an active tunable layer embedded in the MIM cavities. The tunable metafilm absorbers with ISO were then fabricated and characterized. A maximum change in the reflectance of 57% and up to 620 nm shift in the resonance wavelength were measured.

UR - https://www.scopus.com/pages/publications/85072646836

U2 - 10.1515/nanoph-2019-0190

DO - 10.1515/nanoph-2019-0190

M3 - Article

SN - 2192-8614

VL - 8

SP - 1803

EP - 1810

JO - Nanophotonics

JF - Nanophotonics

IS - 10

ER -

Gate-tunable metafilm absorber based on indium silicon oxide

Abstract

Access to Document

Fingerprint

Cite this