Gating effect in the I-V characteristics of iodine doped polyacetylene nanofibers

J. G. Park; G. T. Kim; V. Krstic; S. H. Lee; B. Kim; S. Roth; M. Burghard; Y. W. Park

doi:10.1016/S0379-6779(00)00744-X

Gating effect in the I-V characteristics of iodine doped polyacetylene nanofibers

J. G. Park
, G. T. Kim
, V. Krstic
, S. H. Lee
, B. Kim
, S. Roth
, M. Burghard
, Y. W. Park

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

The I-V characteristics of iodine doped polyacetylene (PA) nanofibers were measured as function of temperature. Platinum electrodes on top of SiO₂ substrates were used to prevent reaction with iodine dopant. The distance between the two electrodes is approximately 100 nm. Upon iodine doping, non-ohmic I-V characteristics are observed. The gate dependence shows the charge carrier to be hole with a mobility μ_FET ∼ 4.4×10^-5 cm²/Vs at 233K.

Original language	English
Pages (from-to)	469-470
Number of pages	2
Journal	Synthetic Metals
Volume	119
Issue number	1-3
DOIs	https://doi.org/10.1016/S0379-6779(00)00744-X
State	Published - Mar 15 2001
Externally published	Yes

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title = "Gating effect in the I-V characteristics of iodine doped polyacetylene nanofibers",

abstract = "The I-V characteristics of iodine doped polyacetylene (PA) nanofibers were measured as function of temperature. Platinum electrodes on top of SiO2 substrates were used to prevent reaction with iodine dopant. The distance between the two electrodes is approximately 100 nm. Upon iodine doping, non-ohmic I-V characteristics are observed. The gate dependence shows the charge carrier to be hole with a mobility μFET ∼ 4.4×10-5 cm2/Vs at 233K.",

author = "Park, \{J. G.\} and Kim, \{G. T.\} and V. Krstic and Lee, \{S. H.\} and B. Kim and S. Roth and M. Burghard and Park, \{Y. W.\}",

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AU - Park, J. G.

AU - Kim, G. T.

AU - Krstic, V.

AU - Lee, S. H.

AU - Kim, B.

AU - Roth, S.

AU - Burghard, M.

AU - Park, Y. W.

PY - 2001/3/15

Y1 - 2001/3/15

N2 - The I-V characteristics of iodine doped polyacetylene (PA) nanofibers were measured as function of temperature. Platinum electrodes on top of SiO2 substrates were used to prevent reaction with iodine dopant. The distance between the two electrodes is approximately 100 nm. Upon iodine doping, non-ohmic I-V characteristics are observed. The gate dependence shows the charge carrier to be hole with a mobility μFET ∼ 4.4×10-5 cm2/Vs at 233K.

AB - The I-V characteristics of iodine doped polyacetylene (PA) nanofibers were measured as function of temperature. Platinum electrodes on top of SiO2 substrates were used to prevent reaction with iodine dopant. The distance between the two electrodes is approximately 100 nm. Upon iodine doping, non-ohmic I-V characteristics are observed. The gate dependence shows the charge carrier to be hole with a mobility μFET ∼ 4.4×10-5 cm2/Vs at 233K.

UR - https://www.scopus.com/pages/publications/0035867463

U2 - 10.1016/S0379-6779(00)00744-X

DO - 10.1016/S0379-6779(00)00744-X

M3 - Article

SN - 0379-6779

VL - 119

SP - 469

EP - 470

JO - Synthetic Metals

JF - Synthetic Metals

IS - 1-3

ER -

Gating effect in the I-V characteristics of iodine doped polyacetylene nanofibers

Abstract

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