Generation-after-next power electronics: Ultrawide-bandgap devices, high-temperature packaging, and magnetic nanocomposite materials

Robert J. Kaplar; Jason C. Neely; Dale L. Huber; Lee J. Rashkin

doi:10.1109/MPEL.2016.2643098

Generation-after-next power electronics: Ultrawide-bandgap devices, high-temperature packaging, and magnetic nanocomposite materials

Robert J. Kaplar
, Jason C. Neely
, Dale L. Huber
, Lee J. Rashkin

Research output: Other contribution › peer-review

52 Scopus citations

Abstract

A new generation of power electronic conversion systems is being enabled by wide-bandgap (WBG) devices. Applications in both the civilian and defense sectors are already beginning to benefit from the improved size, weight, and power (SWaP) now being demonstrated in power converters utilizing silicon carbide (SiC) and/or gallium nitride (GaN) switches, and numerous manufacturers are offering various types of switching devices fabricated from these two WBG semiconductors.

Original language	English
DOIs	https://doi.org/10.1109/MPEL.2016.2643098
State	Published - Mar 1 2017
Externally published	Yes

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@misc{f4b49e0fe760420da40b96021ce834a4,

title = "Generation-after-next power electronics: Ultrawide-bandgap devices, high-temperature packaging, and magnetic nanocomposite materials",

abstract = "A new generation of power electronic conversion systems is being enabled by wide-bandgap (WBG) devices. Applications in both the civilian and defense sectors are already beginning to benefit from the improved size, weight, and power (SWaP) now being demonstrated in power converters utilizing silicon carbide (SiC) and/or gallium nitride (GaN) switches, and numerous manufacturers are offering various types of switching devices fabricated from these two WBG semiconductors.",

author = "Kaplar, \{Robert J.\} and Neely, \{Jason C.\} and Huber, \{Dale L.\} and Rashkin, \{Lee J.\}",

year = "2017",

month = mar,

day = "1",

doi = "10.1109/MPEL.2016.2643098",

language = "English",

type = "Other",

}

TY - GEN

T1 - Generation-after-next power electronics: Ultrawide-bandgap devices, high-temperature packaging, and magnetic nanocomposite materials

AU - Kaplar, Robert J.

AU - Neely, Jason C.

AU - Huber, Dale L.

AU - Rashkin, Lee J.

PY - 2017/3/1

Y1 - 2017/3/1

N2 - A new generation of power electronic conversion systems is being enabled by wide-bandgap (WBG) devices. Applications in both the civilian and defense sectors are already beginning to benefit from the improved size, weight, and power (SWaP) now being demonstrated in power converters utilizing silicon carbide (SiC) and/or gallium nitride (GaN) switches, and numerous manufacturers are offering various types of switching devices fabricated from these two WBG semiconductors.

AB - A new generation of power electronic conversion systems is being enabled by wide-bandgap (WBG) devices. Applications in both the civilian and defense sectors are already beginning to benefit from the improved size, weight, and power (SWaP) now being demonstrated in power converters utilizing silicon carbide (SiC) and/or gallium nitride (GaN) switches, and numerous manufacturers are offering various types of switching devices fabricated from these two WBG semiconductors.

UR - https://www.scopus.com/pages/publications/85017607188

U2 - 10.1109/MPEL.2016.2643098

DO - 10.1109/MPEL.2016.2643098

M3 - Other contribution

ER -

Generation-after-next power electronics: Ultrawide-bandgap devices, high-temperature packaging, and magnetic nanocomposite materials

Abstract

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