Abstract
The saturation properties of terahertz emission from biased, large-aperture photoconductors excited by trains of amplified femtosecond optical pulses are presented. A direct comparison is made of the multiple-pulse saturation properties of terahertz emission from semi-insulating GaAs and low-temperature-grown GaAs emitters with different carrier lifetimes. When the carrier lifetime is less than or comparable with the interpulse spacing, a significant enhancement of the narrow-band terahertz output is observed. The enhancement is not observed for emitters with long carrier lifetimes, consistent with the results of a previously derived saturation theory [Opt. Lett. 18, 1340 (1993)].
| Original language | English |
|---|---|
| Pages (from-to) | 241-243 |
| Number of pages | 3 |
| Journal | Optics Letters |
| Volume | 24 |
| Issue number | 4 |
| DOIs | |
| State | Published - Feb 15 1999 |
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