GRAIN BOUNDARIES IN GaAs.

C. B. Carter; N. H. Chd; Z. Elgat; R. Fletcher; D. K. Wagner

GRAIN BOUNDARIES IN GaAs.

C. B. Carter
, N. H. Chd
, Z. Elgat
, R. Fletcher
, D. K. Wagner

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

GaAs bicrystals have been produced by growing the GaAs directly on Ge bicrystals using the organo-metallic vapor phase epitaxy technique. The use of this new approach is illustrated for the first-order, SIGMA equals 3, twin and for SIGMA equals 5, left bracket 001 right bracket tilt boundary. Both interfaces are invariably faceted. Growth on a left brace 110 right brace substrate also produces numerous microtwins which can lead to the formation of higher-order twin interfaces. This effect is illustrated by the observation of the second-order SIGMA equals 9 interface.

Original language	English
Title of host publication	Institute of Physics Conference Series
Pages	221-226
Number of pages	6
Edition	76
State	Published - Dec 1 1985
Externally published	Yes

Cite this

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title = "GRAIN BOUNDARIES IN GaAs.",

abstract = "GaAs bicrystals have been produced by growing the GaAs directly on Ge bicrystals using the organo-metallic vapor phase epitaxy technique. The use of this new approach is illustrated for the first-order, SIGMA equals 3, twin and for SIGMA equals 5, left bracket 001 right bracket tilt boundary. Both interfaces are invariably faceted. Growth on a left brace 110 right brace substrate also produces numerous microtwins which can lead to the formation of higher-order twin interfaces. This effect is illustrated by the observation of the second-order SIGMA equals 9 interface.",

author = "Carter, \{C. B.\} and Chd, \{N. H.\} and Z. Elgat and R. Fletcher and Wagner, \{D. K.\}",

year = "1985",

month = dec,

day = "1",

language = "English",

isbn = "0854981675",

pages = "221--226",

booktitle = "Institute of Physics Conference Series",

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AU - Carter, C. B.

AU - Chd, N. H.

AU - Elgat, Z.

AU - Fletcher, R.

AU - Wagner, D. K.

PY - 1985/12/1

Y1 - 1985/12/1

N2 - GaAs bicrystals have been produced by growing the GaAs directly on Ge bicrystals using the organo-metallic vapor phase epitaxy technique. The use of this new approach is illustrated for the first-order, SIGMA equals 3, twin and for SIGMA equals 5, left bracket 001 right bracket tilt boundary. Both interfaces are invariably faceted. Growth on a left brace 110 right brace substrate also produces numerous microtwins which can lead to the formation of higher-order twin interfaces. This effect is illustrated by the observation of the second-order SIGMA equals 9 interface.

AB - GaAs bicrystals have been produced by growing the GaAs directly on Ge bicrystals using the organo-metallic vapor phase epitaxy technique. The use of this new approach is illustrated for the first-order, SIGMA equals 3, twin and for SIGMA equals 5, left bracket 001 right bracket tilt boundary. Both interfaces are invariably faceted. Growth on a left brace 110 right brace substrate also produces numerous microtwins which can lead to the formation of higher-order twin interfaces. This effect is illustrated by the observation of the second-order SIGMA equals 9 interface.

UR - https://www.scopus.com/pages/publications/0022177721

M3 - Conference contribution

SN - 0854981675

SP - 221

EP - 226

BT - Institute of Physics Conference Series

ER -

GRAIN BOUNDARIES IN GaAs.

Abstract

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