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Graphene-induced strong quenching of optical phonons in III-V semiconductor heterostructures

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

We demonstrate that monolayer graphene transferred onto III-V semiconductor heterostructures induces strong quenching of the optical phonons in III-V semiconductor epilayers. Such graphene-induced optical phonon quenching is even stronger than that of thin metal films.
Original languageEnglish
Title of host publication2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings
Pages1-2
Number of pages2
Volume2017-January
DOIs
StatePublished - Oct 25 2017
Externally publishedYes

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