Ground-state properties, thermodynamics and systematics of electron-hole liquid in Ge and Si under uniaxial stress

G. Vignale; K. S. Singwi; R. K. Kalia; P. Vashishta

doi:10.1088/0022-3719/16/4/016

Ground-state properties, thermodynamics and systematics of electron-hole liquid in Ge and Si under uniaxial stress

G. Vignale
, K. S. Singwi
, R. K. Kalia
, P. Vashishta

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The authors present results for the ground-state and critical properties of electron-hole liquid in germanium and silicon under continuously varying stress in different symmetry directions. Comparison has been made with experimental data wherever available. The validity of scaling relations has also been examined.

Original language	English
Pages (from-to)	699-709
Number of pages	11
Journal	Journal of Physics C: Solid State Physics
Volume	16
Issue number	4
DOIs	https://doi.org/10.1088/0022-3719/16/4/016
State	Published - Dec 1 1983
Externally published	Yes

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@article{1a434d0f30d54126bccf3850aa59db61,

title = "Ground-state properties, thermodynamics and systematics of electron-hole liquid in Ge and Si under uniaxial stress",

abstract = "The authors present results for the ground-state and critical properties of electron-hole liquid in germanium and silicon under continuously varying stress in different symmetry directions. Comparison has been made with experimental data wherever available. The validity of scaling relations has also been examined.",

author = "G. Vignale and Singwi, \{K. S.\} and Kalia, \{R. K.\} and P. Vashishta",

year = "1983",

month = dec,

day = "1",

doi = "10.1088/0022-3719/16/4/016",

language = "English",

volume = "16",

pages = "699--709",

journal = "Journal of Physics C: Solid State Physics",

issn = "0022-3719",

publisher = "Institute of Physics",

number = "4",

}

TY - JOUR

T1 - Ground-state properties, thermodynamics and systematics of electron-hole liquid in Ge and Si under uniaxial stress

AU - Vignale, G.

AU - Singwi, K. S.

AU - Kalia, R. K.

AU - Vashishta, P.

PY - 1983/12/1

Y1 - 1983/12/1

N2 - The authors present results for the ground-state and critical properties of electron-hole liquid in germanium and silicon under continuously varying stress in different symmetry directions. Comparison has been made with experimental data wherever available. The validity of scaling relations has also been examined.

AB - The authors present results for the ground-state and critical properties of electron-hole liquid in germanium and silicon under continuously varying stress in different symmetry directions. Comparison has been made with experimental data wherever available. The validity of scaling relations has also been examined.

UR - https://www.scopus.com/pages/publications/36149043432

U2 - 10.1088/0022-3719/16/4/016

DO - 10.1088/0022-3719/16/4/016

M3 - Article

SN - 0022-3719

VL - 16

SP - 699

EP - 709

JO - Journal of Physics C: Solid State Physics

JF - Journal of Physics C: Solid State Physics

IS - 4

ER -

Ground-state properties, thermodynamics and systematics of electron-hole liquid in Ge and Si under uniaxial stress

Abstract

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