Growth and photoluminescence studies of Al-rich AlN/Al <inf>x</inf>Ga <inf>1-x</inf>N quantum wells

T. M. Al Tahtamouni; N. Nepal; J. Y. Lin; H. X. Jiang; W. W. Chow

doi:10.1063/1.2358107

Growth and photoluminescence studies of Al-rich AlN/Al <inf>x</inf>Ga <inf>1-x</inf>N quantum wells

T. M. Al Tahtamouni
, N. Nepal
, J. Y. Lin
, H. X. Jiang
, W. W. Chow

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

A set of AlN/Al xGa 1-xN (x ∼ 0.65) quantum wells (QWs) with well width L w, varying from 1 to 3 nm has been grown by metal organic chemical vapor deposition. Low temperature photoluminescence (PL) spectroscopy has been employed to study the L w dependence of the PL spectral peak position, emission efficiency, and linewidth. These results have shown that these AlN/AlGaN QW structures exhibit polarization fields of ∼4 MV/cm. Due to effects of quantum confinement and polarization fields, AlN/AlGaN QWs with L w between 2 and 2.5 nm exhibit the highest quantum efficiency. The dependence of the emission linewidth on L w yielded a linear relationship. The implications of our results on deep ultraviolet optoelectronic device applications are also discussed. © 2006 American Institute of Physics.

Original language	English
Journal	Applied Physics Letters
Volume	89
Issue number	13
DOIs	https://doi.org/10.1063/1.2358107
State	Published - Oct 6 2006
Externally published	Yes

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10.1063/1.2358107

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@article{c9314585f48a480fb3032b53b2917d0f,

title = "Growth and photoluminescence studies of Al-rich AlN/Al xGa 1-xN quantum wells",

abstract = "A set of AlN/Al xGa 1-xN (x ∼ 0.65) quantum wells (QWs) with well width L w, varying from 1 to 3 nm has been grown by metal organic chemical vapor deposition. Low temperature photoluminescence (PL) spectroscopy has been employed to study the L w dependence of the PL spectral peak position, emission efficiency, and linewidth. These results have shown that these AlN/AlGaN QW structures exhibit polarization fields of ∼4 MV/cm. Due to effects of quantum confinement and polarization fields, AlN/AlGaN QWs with L w between 2 and 2.5 nm exhibit the highest quantum efficiency. The dependence of the emission linewidth on L w yielded a linear relationship. The implications of our results on deep ultraviolet optoelectronic device applications are also discussed. {\textcopyright} 2006 American Institute of Physics.",

author = "\{Al Tahtamouni\}, \{T. M.\} and N. Nepal and Lin, \{J. Y.\} and Jiang, \{H. X.\} and Chow, \{W. W.\}",

year = "2006",

month = oct,

day = "6",

doi = "10.1063/1.2358107",

language = "English",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "13",

}

TY - JOUR

T1 - Growth and photoluminescence studies of Al-rich AlN/Al xGa 1-xN quantum wells

AU - Al Tahtamouni, T. M.

AU - Nepal, N.

AU - Lin, J. Y.

AU - Jiang, H. X.

AU - Chow, W. W.

PY - 2006/10/6

Y1 - 2006/10/6

N2 - A set of AlN/Al xGa 1-xN (x ∼ 0.65) quantum wells (QWs) with well width L w, varying from 1 to 3 nm has been grown by metal organic chemical vapor deposition. Low temperature photoluminescence (PL) spectroscopy has been employed to study the L w dependence of the PL spectral peak position, emission efficiency, and linewidth. These results have shown that these AlN/AlGaN QW structures exhibit polarization fields of ∼4 MV/cm. Due to effects of quantum confinement and polarization fields, AlN/AlGaN QWs with L w between 2 and 2.5 nm exhibit the highest quantum efficiency. The dependence of the emission linewidth on L w yielded a linear relationship. The implications of our results on deep ultraviolet optoelectronic device applications are also discussed. © 2006 American Institute of Physics.

AB - A set of AlN/Al xGa 1-xN (x ∼ 0.65) quantum wells (QWs) with well width L w, varying from 1 to 3 nm has been grown by metal organic chemical vapor deposition. Low temperature photoluminescence (PL) spectroscopy has been employed to study the L w dependence of the PL spectral peak position, emission efficiency, and linewidth. These results have shown that these AlN/AlGaN QW structures exhibit polarization fields of ∼4 MV/cm. Due to effects of quantum confinement and polarization fields, AlN/AlGaN QWs with L w between 2 and 2.5 nm exhibit the highest quantum efficiency. The dependence of the emission linewidth on L w yielded a linear relationship. The implications of our results on deep ultraviolet optoelectronic device applications are also discussed. © 2006 American Institute of Physics.

UR - https://www.scopus.com/pages/publications/33749264579

U2 - 10.1063/1.2358107

DO - 10.1063/1.2358107

M3 - Article

SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

ER -

Growth and photoluminescence studies of Al-rich AlN/Al <inf>x</inf>Ga <inf>1-x</inf>N quantum wells

Abstract

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