Growth of buried metal aluminides and gallides and of rare-earth monopnictides in compound semiconductors. A comparison

Transition metal aluminides and gallides and rare earth monopnictides have been grown as buried conducting layers in III-V compound semiconductor heterostructures. These metallic and semi-metallic compounds have the CsCl and NaCl structures, respectively. The criteria for achieving (100) oriented epitaxial growth on (100)III-V semiconductor surfaces are different for each class of material. The methods used to achieve III-V/metal/III-V heteroepitaxial structures are described. The different approaches needed for the aluminides or gallides and the monopnictides form the basis for a comparative study.