Growth of GaAs on Sc<inf>0.3</inf>Er<inf>0.7</inf>As epilayers

Jane G. Zhu; Chris J. Palmstrom; C. Barry Carter

Growth of GaAs on Sc<inf>0.3</inf>Er<inf>0.7</inf>As epilayers

Jane G. Zhu
, Chris J. Palmstrom
, C. Barry Carter

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

The formation of GaAs/Sc0.3Er0.7As/GaAs heterostructures by molecular beam epitactic growth is investigated. Twinned grains are often observed in the top GaAs layer at the GaAs/Sc0.3Er0.7As heterojunction region for the samples grown on (100) GaAs substrates. A comparison is made of the island growth of GaAs on Sc0.3Er0.7As for (100) and (311) orientations. The crystalline quality of the GaAs on top of Sc0.3Er0.7As is significantly improved for the samples grown on (311) A GaAs substrates.

Original language	English
Title of host publication	Institute of Physics Conference Series
Pages	419-422
Number of pages	4
Edition	117
State	Published - Dec 1 1991
Externally published	Yes

Cite this

@inproceedings{0e80b592cec74877b165bda9514c9145,

title = "Growth of GaAs on Sc0.3Er0.7As epilayers",

abstract = "The formation of GaAs/Sc0.3Er0.7As/GaAs heterostructures by molecular beam epitactic growth is investigated. Twinned grains are often observed in the top GaAs layer at the GaAs/Sc0.3Er0.7As heterojunction region for the samples grown on (100) GaAs substrates. A comparison is made of the island growth of GaAs on Sc0.3Er0.7As for (100) and (311) orientations. The crystalline quality of the GaAs on top of Sc0.3Er0.7As is significantly improved for the samples grown on (311) A GaAs substrates.",

author = "Zhu, \{Jane G.\} and Palmstrom, \{Chris J.\} and Carter, \{C. Barry\}",

year = "1991",

month = dec,

day = "1",

language = "English",

isbn = "0854984062",

pages = "419--422",

booktitle = "Institute of Physics Conference Series",

edition = "117",

}

TY - GEN

T1 - Growth of GaAs on Sc0.3Er0.7As epilayers

AU - Zhu, Jane G.

AU - Palmstrom, Chris J.

AU - Carter, C. Barry

PY - 1991/12/1

Y1 - 1991/12/1

N2 - The formation of GaAs/Sc0.3Er0.7As/GaAs heterostructures by molecular beam epitactic growth is investigated. Twinned grains are often observed in the top GaAs layer at the GaAs/Sc0.3Er0.7As heterojunction region for the samples grown on (100) GaAs substrates. A comparison is made of the island growth of GaAs on Sc0.3Er0.7As for (100) and (311) orientations. The crystalline quality of the GaAs on top of Sc0.3Er0.7As is significantly improved for the samples grown on (311) A GaAs substrates.

AB - The formation of GaAs/Sc0.3Er0.7As/GaAs heterostructures by molecular beam epitactic growth is investigated. Twinned grains are often observed in the top GaAs layer at the GaAs/Sc0.3Er0.7As heterojunction region for the samples grown on (100) GaAs substrates. A comparison is made of the island growth of GaAs on Sc0.3Er0.7As for (100) and (311) orientations. The crystalline quality of the GaAs on top of Sc0.3Er0.7As is significantly improved for the samples grown on (311) A GaAs substrates.

UR - https://www.scopus.com/pages/publications/0026360364

M3 - Conference contribution

SN - 0854984062

SP - 419

EP - 422

BT - Institute of Physics Conference Series

ER -

Growth of GaAs on Sc<inf>0.3</inf>Er<inf>0.7</inf>As epilayers

Abstract

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