Growth of high Indium Percentage InGaSb on InP substrates using the interfacial misfit dislocation array growth mode

F. F. Ince; A. T. Newell; K. J. Reilly; S. Seth; T. J. Rotter; A. Mansoori; S. Addamane; D. Shima; L. Miroshnik; B. Rummel; A. Li; T. Sinno; S. M. Han; G. Balakrishnan

doi:10.1109/CSW55288.2022.9930345

Growth of high Indium Percentage InGaSb on InP substrates using the interfacial misfit dislocation array growth mode

F. F. Ince
, A. T. Newell
, K. J. Reilly
, S. Seth
, T. J. Rotter
, A. Mansoori
, S. Addamane
, D. Shima
, L. Miroshnik
, B. Rummel
, A. Li
, T. Sinno
, S. M. Han
, G. Balakrishnan

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We present the growth of In0.53Ga0.47Sb on InP using the interfacial misfit dislocation growth mode. The growth is performed by using an intermediate InGaAs layer and achieving an As for Sb anion exchange. Characterization results show the formation of an interfacial misfit dislocation array, however the epilayer shows significant phase segregation.

Original language	English
Title of host publication	2022 Compound Semiconductor Week, CSW 2022
DOIs	https://doi.org/10.1109/CSW55288.2022.9930345
State	Published - Jan 1 2022
Externally published	Yes

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10.1109/CSW55288.2022.9930345

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Ince, F. F., Newell, A. T., Reilly, K. J., Seth, S., Rotter, T. J., Mansoori, A., Addamane, S., Shima, D., Miroshnik, L., Rummel, B., Li, A., Sinno, T., Han, S. M., & Balakrishnan, G. (2022). Growth of high Indium Percentage InGaSb on InP substrates using the interfacial misfit dislocation array growth mode. In 2022 Compound Semiconductor Week, CSW 2022 https://doi.org/10.1109/CSW55288.2022.9930345

@inproceedings{bc1803f3aa224f729b60e96140d6264f,

title = "Growth of high Indium Percentage InGaSb on InP substrates using the interfacial misfit dislocation array growth mode",

abstract = "We present the growth of In0.53Ga0.47Sb on InP using the interfacial misfit dislocation growth mode. The growth is performed by using an intermediate InGaAs layer and achieving an As for Sb anion exchange. Characterization results show the formation of an interfacial misfit dislocation array, however the epilayer shows significant phase segregation.",

author = "Ince, \{F. F.\} and Newell, \{A. T.\} and Reilly, \{K. J.\} and S. Seth and Rotter, \{T. J.\} and A. Mansoori and S. Addamane and D. Shima and L. Miroshnik and B. Rummel and A. Li and T. Sinno and Han, \{S. M.\} and G. Balakrishnan",

year = "2022",

month = jan,

day = "1",

doi = "10.1109/CSW55288.2022.9930345",

language = "English",

isbn = "9781665453400",

booktitle = "2022 Compound Semiconductor Week, CSW 2022",

}

Ince, FF, Newell, AT, Reilly, KJ, Seth, S, Rotter, TJ, Mansoori, A, Addamane, S, Shima, D, Miroshnik, L, Rummel, B, Li, A, Sinno, T, Han, SM & Balakrishnan, G 2022, Growth of high Indium Percentage InGaSb on InP substrates using the interfacial misfit dislocation array growth mode. in 2022 Compound Semiconductor Week, CSW 2022. https://doi.org/10.1109/CSW55288.2022.9930345

TY - GEN

T1 - Growth of high Indium Percentage InGaSb on InP substrates using the interfacial misfit dislocation array growth mode

AU - Ince, F. F.

AU - Newell, A. T.

AU - Reilly, K. J.

AU - Seth, S.

AU - Rotter, T. J.

AU - Mansoori, A.

AU - Addamane, S.

AU - Shima, D.

AU - Miroshnik, L.

AU - Rummel, B.

AU - Li, A.

AU - Sinno, T.

AU - Han, S. M.

AU - Balakrishnan, G.

PY - 2022/1/1

Y1 - 2022/1/1

N2 - We present the growth of In0.53Ga0.47Sb on InP using the interfacial misfit dislocation growth mode. The growth is performed by using an intermediate InGaAs layer and achieving an As for Sb anion exchange. Characterization results show the formation of an interfacial misfit dislocation array, however the epilayer shows significant phase segregation.

AB - We present the growth of In0.53Ga0.47Sb on InP using the interfacial misfit dislocation growth mode. The growth is performed by using an intermediate InGaAs layer and achieving an As for Sb anion exchange. Characterization results show the formation of an interfacial misfit dislocation array, however the epilayer shows significant phase segregation.

UR - https://www.scopus.com/pages/publications/85142661393

U2 - 10.1109/CSW55288.2022.9930345

DO - 10.1109/CSW55288.2022.9930345

M3 - Conference contribution

SN - 9781665453400

BT - 2022 Compound Semiconductor Week, CSW 2022

ER -

Growth of high Indium Percentage InGaSb on InP substrates using the interfacial misfit dislocation array growth mode

Abstract

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