Abstract
We characterize a high-density sample of negatively charged silicon-vacancy (SiV-) centers in diamond using collinear optical multidimensional coherent spectroscopy. By comparing the results of complementary signal detection schemes, we identify a hidden population of SiV- centers that is not typically observed in photoluminescence and which exhibits significant spectral inhomogeneity and extended electronic T2 times. The phenomenon is likely caused by strain, indicating a potential mechanism for controlling electric coherence in color-center-based quantum devices.
| Original language | English |
|---|---|
| Journal | Physical Review Letters |
| Volume | 126 |
| Issue number | 21 |
| DOIs | |
| State | Published - May 24 2021 |
| Externally published | Yes |
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