High Open-Circuit Voltages in Tin-Rich Low-Bandgap Perovskite-Based Planar Heterojunction Photovoltaics

Baodan Zhao; Mojtaba Abdi-Jalebi; Maxim Tabachnyk; Hugh Glass; Varun S. Kamboj; Wanyi Nie; Andrew J. Pearson; Yuttapoom Puttisong; Karl C. Gödel; Harvey E. Beere; David A. Ritchie; Aditya Mohite; Siân E. Dutton; Richard H. Friend; Aditya Sadhanala

doi:10.1002/adma.201604744

High Open-Circuit Voltages in Tin-Rich Low-Bandgap Perovskite-Based Planar Heterojunction Photovoltaics

Baodan Zhao
, Mojtaba Abdi-Jalebi
, Maxim Tabachnyk
, Hugh Glass
, Varun S. Kamboj
, Wanyi Nie
, Andrew J. Pearson
, Yuttapoom Puttisong
, Karl C. Gödel
, Harvey E. Beere
, David A. Ritchie
, Aditya Mohite
, Siân E. Dutton
, Richard H. Friend
, Aditya Sadhanala

Los Alamos National Laboratory

Research output: Contribution to journal › Article › peer-review

266 Scopus citations

Abstract

Researchers have developed a novel elevated temperature processing method for preparing CH₃NH₃(Pb_xSn_1-x)I₃ perovskites on a Poly(3,4-ethylenedioxythiophene):poly(styrenesulf onate) (PEDOT:PSS)/nickel oxide (NiO) bilayer, which results in the formation of large micron-sized grains with complete substrate coverage. The semiconductors exhibit relatively low energetic and structural disorder and impart high power conversion efficiencies (PCEs) when fabricated into a PV device. Open circuit voltages (VOC�s) approaching the prediction of the Shockley�Queisser (S�Q) model are also demonstrated for PVs prepared using the lowest bandgap perovskites.

Original language	English
Article number	1604744
Journal	Advanced Materials
Volume	29
Issue number	2
DOIs	https://doi.org/10.1002/adma.201604744
State	Published - Jan 1 2017

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Zhao, B., Abdi-Jalebi, M., Tabachnyk, M., Glass, H., Kamboj, V. S., Nie, W., Pearson, A. J., Puttisong, Y., Gödel, K. C., Beere, H. E., Ritchie, D. A., Mohite, A., Dutton, S. E., Friend, R. H., & Sadhanala, A. (2017). High Open-Circuit Voltages in Tin-Rich Low-Bandgap Perovskite-Based Planar Heterojunction Photovoltaics. Advanced Materials, 29(2), Article 1604744. https://doi.org/10.1002/adma.201604744

@article{875a14257fbc41ccb67476b861044eb3,

title = "High Open-Circuit Voltages in Tin-Rich Low-Bandgap Perovskite-Based Planar Heterojunction Photovoltaics",

abstract = "Researchers have developed a novel elevated temperature processing method for preparing CH3NH3(PbxSn1-x)I3 perovskites on a Poly(3,4-ethylenedioxythiophene):poly(styrenesulf onate) (PEDOT:PSS)/nickel oxide (NiO) bilayer, which results in the formation of large micron-sized grains with complete substrate coverage. The semiconductors exhibit relatively low energetic and structural disorder and impart high power conversion efficiencies (PCEs) when fabricated into a PV device. Open circuit voltages (VOC�s) approaching the prediction of the Shockley�Queisser (S�Q) model are also demonstrated for PVs prepared using the lowest bandgap perovskites.",

author = "Baodan Zhao and Mojtaba Abdi-Jalebi and Maxim Tabachnyk and Hugh Glass and Kamboj, \{Varun S.\} and Wanyi Nie and Pearson, \{Andrew J.\} and Yuttapoom Puttisong and G{\"o}del, \{Karl C.\} and Beere, \{Harvey E.\} and Ritchie, \{David A.\} and Aditya Mohite and Dutton, \{Si{\^a}n E.\} and Friend, \{Richard H.\} and Aditya Sadhanala",

year = "2017",

month = jan,

day = "1",

doi = "10.1002/adma.201604744",

language = "English",

volume = "29",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-Blackwell",

number = "2",

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Zhao, B, Abdi-Jalebi, M, Tabachnyk, M, Glass, H, Kamboj, VS, Nie, W, Pearson, AJ, Puttisong, Y, Gödel, KC, Beere, HE, Ritchie, DA, Mohite, A, Dutton, SE, Friend, RH & Sadhanala, A 2017, 'High Open-Circuit Voltages in Tin-Rich Low-Bandgap Perovskite-Based Planar Heterojunction Photovoltaics', Advanced Materials, vol. 29, no. 2, 1604744. https://doi.org/10.1002/adma.201604744

TY - JOUR

T1 - High Open-Circuit Voltages in Tin-Rich Low-Bandgap Perovskite-Based Planar Heterojunction Photovoltaics

AU - Zhao, Baodan

AU - Abdi-Jalebi, Mojtaba

AU - Tabachnyk, Maxim

AU - Glass, Hugh

AU - Kamboj, Varun S.

AU - Nie, Wanyi

AU - Pearson, Andrew J.

AU - Puttisong, Yuttapoom

AU - Gödel, Karl C.

AU - Beere, Harvey E.

AU - Ritchie, David A.

AU - Mohite, Aditya

AU - Dutton, Siân E.

AU - Friend, Richard H.

AU - Sadhanala, Aditya

PY - 2017/1/1

Y1 - 2017/1/1

N2 - Researchers have developed a novel elevated temperature processing method for preparing CH3NH3(PbxSn1-x)I3 perovskites on a Poly(3,4-ethylenedioxythiophene):poly(styrenesulf onate) (PEDOT:PSS)/nickel oxide (NiO) bilayer, which results in the formation of large micron-sized grains with complete substrate coverage. The semiconductors exhibit relatively low energetic and structural disorder and impart high power conversion efficiencies (PCEs) when fabricated into a PV device. Open circuit voltages (VOC�s) approaching the prediction of the Shockley�Queisser (S�Q) model are also demonstrated for PVs prepared using the lowest bandgap perovskites.

AB - Researchers have developed a novel elevated temperature processing method for preparing CH3NH3(PbxSn1-x)I3 perovskites on a Poly(3,4-ethylenedioxythiophene):poly(styrenesulf onate) (PEDOT:PSS)/nickel oxide (NiO) bilayer, which results in the formation of large micron-sized grains with complete substrate coverage. The semiconductors exhibit relatively low energetic and structural disorder and impart high power conversion efficiencies (PCEs) when fabricated into a PV device. Open circuit voltages (VOC�s) approaching the prediction of the Shockley�Queisser (S�Q) model are also demonstrated for PVs prepared using the lowest bandgap perovskites.

UR - https://www.scopus.com/pages/publications/84997693768

U2 - 10.1002/adma.201604744

DO - 10.1002/adma.201604744

M3 - Article

SN - 0935-9648

VL - 29

JO - Advanced Materials

JF - Advanced Materials

IS - 2

M1 - 1604744

ER -

High Open-Circuit Voltages in Tin-Rich Low-Bandgap Perovskite-Based Planar Heterojunction Photovoltaics

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