@inproceedings{72c411607809456588cf1b60cc4bb0f0,
title = "High-performance mode-locked lasers on silicon",
abstract = "In this paper we review our recent progress on high performance mode locked InAs quantum dot lasers that are directly grown on CMOS compatible silicon substrates by solid-source molecular beam epitaxy. Different mode locking configurations are designed and fabricated. The lasers operate within the O-band wavelength range, showing pulsewidth down to 490 fs, RF linewidth down to 400 Hz, and pulse-to-pulse timing jitter down to 6 fs. When the laser is used as a comb source for wavelength division multiplexing transmission systems, 4.1 terabit per second transmission capacity was achieved. Self-mode locking is also investigated both experimentally and theoretically. The demonstrated performance makes those lasers promising light source candidates for future large-scale silicon electronic and photonic integrated circuits (EPICs) with multiple functionalities.",
keywords = "comb generation, photonic integrated circuits, quantum dots, semiconductor mode-locked lasers, Silicon photonics, WDM transmission",
author = "Songtao Liu and Xinru Wu and Justin Norman and Daehwan Jung and Mario Dumont and Chen Shang and Yating Wan and Kennedy, \{M. J.\} and Bozhang Dong and Dominik Auth and Stefan Breuer and Fr{\'e}d{\'e}ric Grillot and Weng Chow and Arthur Gossard and John Bowers",
note = "Publisher Copyright: {\textcopyright} 2020 SPIE.; Physics and Simulation of Optoelectronic Devices XXVIII 2020 ; Conference date: 03-02-2020 Through 06-02-2020",
year = "2020",
doi = "10.1117/12.2552224",
language = "English",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
editor = "Bernd Witzigmann and Marek Osinski and Yasuhiko Arakawa",
booktitle = "Physics and Simulation of Optoelectronic Devices XXVIII",
address = "United States",
}