High-power, high-temperature InGaAs-AIGaAs strained-layer quantum-well diode lasers

C. A. Wang; H. K. Choi; J. N. Walpole; W. W. Reichert; G. A. Evans; C. T. Fuller; W. W. Chow

doi:10.1049/el:19940462

High-power, high-temperature InGaAs-AIGaAs strained-layer quantum-well diode lasers

C. A. Wang
, H. K. Choi
, J. N. Walpole
, W. W. Reichert
, G. A. Evans
, C. T. Fuller
, W. W. Chow

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Output power of 2.26W and maximum power conversion efficiency of 57% were obtained for InGaAs-AlGaAs strained-layer quantum-well lasers (25 °C, λ ≃ 1 μm). Output powers were 2.35W (-55°C) and 1.79W (75°C) with maximum power efficiencies of 51% (-55°C) and 46% (75°C). © 1994, IEE. All rights reserved.

Original language	English
Pages (from-to)	646-648
Number of pages	3
Journal	Electronics Letters
Volume	30
Issue number	8
DOIs	https://doi.org/10.1049/el:19940462
State	Published - Jan 1 1994
Externally published	Yes

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title = "High-power, high-temperature InGaAs-AIGaAs strained-layer quantum-well diode lasers",

abstract = "Output power of 2.26W and maximum power conversion efficiency of 57\% were obtained for InGaAs-AlGaAs strained-layer quantum-well lasers (25 °C, λ ≃ 1 μm). Output powers were 2.35W (-55°C) and 1.79W (75°C) with maximum power efficiencies of 51\% (-55°C) and 46\% (75°C). {\textcopyright} 1994, IEE. All rights reserved.",

author = "Wang, \{C. A.\} and Choi, \{H. K.\} and Walpole, \{J. N.\} and Reichert, \{W. W.\} and Evans, \{G. A.\} and Fuller, \{C. T.\} and Chow, \{W. W.\}",

year = "1994",

month = jan,

day = "1",

doi = "10.1049/el:19940462",

language = "English",

volume = "30",

pages = "646--648",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley \& Sons Inc.",

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TY - JOUR

T1 - High-power, high-temperature InGaAs-AIGaAs strained-layer quantum-well diode lasers

AU - Wang, C. A.

AU - Choi, H. K.

AU - Walpole, J. N.

AU - Reichert, W. W.

AU - Evans, G. A.

AU - Fuller, C. T.

AU - Chow, W. W.

PY - 1994/1/1

Y1 - 1994/1/1

N2 - Output power of 2.26W and maximum power conversion efficiency of 57% were obtained for InGaAs-AlGaAs strained-layer quantum-well lasers (25 °C, λ ≃ 1 μm). Output powers were 2.35W (-55°C) and 1.79W (75°C) with maximum power efficiencies of 51% (-55°C) and 46% (75°C). © 1994, IEE. All rights reserved.

AB - Output power of 2.26W and maximum power conversion efficiency of 57% were obtained for InGaAs-AlGaAs strained-layer quantum-well lasers (25 °C, λ ≃ 1 μm). Output powers were 2.35W (-55°C) and 1.79W (75°C) with maximum power efficiencies of 51% (-55°C) and 46% (75°C). © 1994, IEE. All rights reserved.

UR - https://www.scopus.com/pages/publications/0028407262

U2 - 10.1049/el:19940462

DO - 10.1049/el:19940462

M3 - Article

SN - 0013-5194

VL - 30

SP - 646

EP - 648

JO - Electronics Letters

JF - Electronics Letters

IS - 8

ER -

High-power, high-temperature InGaAs-AIGaAs strained-layer quantum-well diode lasers

Abstract

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