High-Speed InP-Based p-i-n Photodiodes with InGaAs/GaAsSb Type-II Quantum Wells

Bassem Tossoun; Robert Stephens; Ye Wang; Sadhvikas Addamane; Ganesh Balakrishnan; Archie Holmes; Andreas Beling

doi:10.1109/LPT.2018.2793663

High-Speed InP-Based p-i-n Photodiodes with InGaAs/GaAsSb Type-II Quantum Wells

Bassem Tossoun
, Robert Stephens
, Ye Wang
, Sadhvikas Addamane
, Ganesh Balakrishnan
, Archie Holmes
, Andreas Beling

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

We present and discuss the performance characteristics of InP-based p-i-n photodiodes (PDs) with InGaAs/GaAsSb type-II multiple quantum wells absorption regions designed to absorb light at mid-infrared wavelengths. Top-illuminated and waveguide-integrated PDs are fabricated with dark currents as low as 100 nA at -2 V, an external responsivity as high as 0.27 A/Wat 2 μm and 0.3 A/Wat 1.55 μm, and a 3-dB bandwidth of 3.5 GHz at 2 μm.

Original language	English
Pages (from-to)	399-402
Number of pages	4
Journal	IEEE Photonics Technology Letters
Volume	30
Issue number	4
DOIs	https://doi.org/10.1109/LPT.2018.2793663
State	Published - Feb 15 2018
Externally published	Yes

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title = "High-Speed InP-Based p-i-n Photodiodes with InGaAs/GaAsSb Type-II Quantum Wells",

abstract = "We present and discuss the performance characteristics of InP-based p-i-n photodiodes (PDs) with InGaAs/GaAsSb type-II multiple quantum wells absorption regions designed to absorb light at mid-infrared wavelengths. Top-illuminated and waveguide-integrated PDs are fabricated with dark currents as low as 100 nA at -2 V, an external responsivity as high as 0.27 A/Wat 2 μm and 0.3 A/Wat 1.55 μm, and a 3-dB bandwidth of 3.5 GHz at 2 μm.",

author = "Bassem Tossoun and Robert Stephens and Ye Wang and Sadhvikas Addamane and Ganesh Balakrishnan and Archie Holmes and Andreas Beling",

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T1 - High-Speed InP-Based p-i-n Photodiodes with InGaAs/GaAsSb Type-II Quantum Wells

AU - Tossoun, Bassem

AU - Stephens, Robert

AU - Wang, Ye

AU - Addamane, Sadhvikas

AU - Balakrishnan, Ganesh

AU - Holmes, Archie

AU - Beling, Andreas

PY - 2018/2/15

Y1 - 2018/2/15

N2 - We present and discuss the performance characteristics of InP-based p-i-n photodiodes (PDs) with InGaAs/GaAsSb type-II multiple quantum wells absorption regions designed to absorb light at mid-infrared wavelengths. Top-illuminated and waveguide-integrated PDs are fabricated with dark currents as low as 100 nA at -2 V, an external responsivity as high as 0.27 A/Wat 2 μm and 0.3 A/Wat 1.55 μm, and a 3-dB bandwidth of 3.5 GHz at 2 μm.

AB - We present and discuss the performance characteristics of InP-based p-i-n photodiodes (PDs) with InGaAs/GaAsSb type-II multiple quantum wells absorption regions designed to absorb light at mid-infrared wavelengths. Top-illuminated and waveguide-integrated PDs are fabricated with dark currents as low as 100 nA at -2 V, an external responsivity as high as 0.27 A/Wat 2 μm and 0.3 A/Wat 1.55 μm, and a 3-dB bandwidth of 3.5 GHz at 2 μm.

UR - https://www.scopus.com/pages/publications/85041240588

U2 - 10.1109/LPT.2018.2793663

DO - 10.1109/LPT.2018.2793663

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JF - IEEE Photonics Technology Letters

IS - 4

ER -

High-Speed InP-Based p-i-n Photodiodes with InGaAs/GaAsSb Type-II Quantum Wells

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