High speed InP-based type-II multiple quantum well integrated waveguide photodiode at 2.0-μm wavelength

Bassem Tossoun; Sadhvikas Addamane; Ganesh Balakrishnan; Archie L. Holmes; Andreas Beling

doi:10.1364/IPRSN.2018.IW1B.3

High speed InP-based type-II multiple quantum well integrated waveguide photodiode at 2.0-μm wavelength

Bassem Tossoun
, Sadhvikas Addamane
, Ganesh Balakrishnan
, Archie L. Holmes
, Andreas Beling

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We present a high-speed integrated waveguide photodetector exhibiting a dark current of 2 nA at -2 V with an internal responsivity of 0.25 A/W and a 3-dB bandwidth above 8 GHz at 2 μm wavelength.

Original language	English
Title of host publication	Optics InfoBase Conference Papers
Volume	Part F101-IPRSN 2018
DOIs	https://doi.org/10.1364/IPRSN.2018.IW1B.3
State	Published - Jan 1 2018
Externally published	Yes

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10.1364/IPRSN.2018.IW1B.3

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@inproceedings{fa00cdbaa2dc42c3a99d43b8a21cd3fc,

title = "High speed InP-based type-II multiple quantum well integrated waveguide photodiode at 2.0-μm wavelength",

abstract = "We present a high-speed integrated waveguide photodetector exhibiting a dark current of 2 nA at -2 V with an internal responsivity of 0.25 A/W and a 3-dB bandwidth above 8 GHz at 2 μm wavelength.",

author = "Bassem Tossoun and Sadhvikas Addamane and Ganesh Balakrishnan and Holmes, \{Archie L.\} and Andreas Beling",

year = "2018",

month = jan,

day = "1",

doi = "10.1364/IPRSN.2018.IW1B.3",

language = "English",

isbn = "9781943580439",

volume = "Part F101-IPRSN 2018",

booktitle = "Optics InfoBase Conference Papers",

}

TY - GEN

T1 - High speed InP-based type-II multiple quantum well integrated waveguide photodiode at 2.0-μm wavelength

AU - Tossoun, Bassem

AU - Addamane, Sadhvikas

AU - Balakrishnan, Ganesh

AU - Holmes, Archie L.

AU - Beling, Andreas

PY - 2018/1/1

Y1 - 2018/1/1

N2 - We present a high-speed integrated waveguide photodetector exhibiting a dark current of 2 nA at -2 V with an internal responsivity of 0.25 A/W and a 3-dB bandwidth above 8 GHz at 2 μm wavelength.

AB - We present a high-speed integrated waveguide photodetector exhibiting a dark current of 2 nA at -2 V with an internal responsivity of 0.25 A/W and a 3-dB bandwidth above 8 GHz at 2 μm wavelength.

UR - https://www.scopus.com/pages/publications/85051267540

U2 - 10.1364/IPRSN.2018.IW1B.3

DO - 10.1364/IPRSN.2018.IW1B.3

M3 - Conference contribution

SN - 9781943580439

VL - Part F101-IPRSN 2018

BT - Optics InfoBase Conference Papers

ER -

High speed InP-based type-II multiple quantum well integrated waveguide photodiode at 2.0-μm wavelength

Abstract

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