High-speed type-II InGaAs/GaAsSb multiple quantum-well integrated waveguide photodiodes at 2 μm wavelength

Bassem Tossoun; Ye Wang; Sadhvikas Addamane; Ganesh Balakrishnan; Archie Holmes; Andreas Beling

doi:10.1109/IPCon.2017.8116167

High-speed type-II InGaAs/GaAsSb multiple quantum-well integrated waveguide photodiodes at 2 μm wavelength

Bassem Tossoun
, Ye Wang
, Sadhvikas Addamane
, Ganesh Balakrishnan
, Archie Holmes
, Andreas Beling

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We present a high-speed InP-based photodiode with multiple InGaAs/GaAsSb type-II quantum wells for 2 μm detection. The fabricated photodiode exhibits dark current as low as 100nA at-2V, with an external responsivity of 0.27 A/W, and 3 dB bandwidth of 3.5 GHz at 2 μm.

Original language	English
Title of host publication	30th Annual Conference of the IEEE Photonics Society, IPC 2017
Pages	419-420
Number of pages	2
Volume	2017-January
DOIs	https://doi.org/10.1109/IPCon.2017.8116167
State	Published - Nov 20 2017
Externally published	Yes

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10.1109/IPCon.2017.8116167

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title = "High-speed type-II InGaAs/GaAsSb multiple quantum-well integrated waveguide photodiodes at 2 μm wavelength",

abstract = "We present a high-speed InP-based photodiode with multiple InGaAs/GaAsSb type-II quantum wells for 2 μm detection. The fabricated photodiode exhibits dark current as low as 100nA at-2V, with an external responsivity of 0.27 A/W, and 3 dB bandwidth of 3.5 GHz at 2 μm.",

author = "Bassem Tossoun and Ye Wang and Sadhvikas Addamane and Ganesh Balakrishnan and Archie Holmes and Andreas Beling",

year = "2017",

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doi = "10.1109/IPCon.2017.8116167",

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volume = "2017-January",

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T1 - High-speed type-II InGaAs/GaAsSb multiple quantum-well integrated waveguide photodiodes at 2 μm wavelength

AU - Tossoun, Bassem

AU - Wang, Ye

AU - Addamane, Sadhvikas

AU - Balakrishnan, Ganesh

AU - Holmes, Archie

AU - Beling, Andreas

PY - 2017/11/20

Y1 - 2017/11/20

N2 - We present a high-speed InP-based photodiode with multiple InGaAs/GaAsSb type-II quantum wells for 2 μm detection. The fabricated photodiode exhibits dark current as low as 100nA at-2V, with an external responsivity of 0.27 A/W, and 3 dB bandwidth of 3.5 GHz at 2 μm.

AB - We present a high-speed InP-based photodiode with multiple InGaAs/GaAsSb type-II quantum wells for 2 μm detection. The fabricated photodiode exhibits dark current as low as 100nA at-2V, with an external responsivity of 0.27 A/W, and 3 dB bandwidth of 3.5 GHz at 2 μm.

UR - https://www.scopus.com/pages/publications/85043483184

U2 - 10.1109/IPCon.2017.8116167

DO - 10.1109/IPCon.2017.8116167

M3 - Conference contribution

SN - 9781509065783

VL - 2017-January

SP - 419

EP - 420

BT - 30th Annual Conference of the IEEE Photonics Society, IPC 2017

ER -

High-speed type-II InGaAs/GaAsSb multiple quantum-well integrated waveguide photodiodes at 2 μm wavelength

Abstract

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