HREM of compound semiconductors

B. C. de Cooman; N. H. Cho; Z. Elgat; C. B. Carter

doi:10.1016/0304-3991(85)90148-2

HREM of compound semiconductors

B. C. de Cooman
, N. H. Cho
, Z. Elgat
, C. B. Carter

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

The application of high-resolution electron microscopy to the study of different structures and defects in compound semiconductors is illustrated. The study of epilayers and interfacial dislocations is illustrated for GaAs/AlxGa1-xAs and GaSb/InAs superlattices. A new method for preparing well defined grain boundaries in GaAs is reported together with new observations of defects produced by ion implantation and annealing of GaAs/AlxGa1-xAs superlattices is discussed. A brief comparison is made between simulated images for a conventional 125 kV machine and a 400 kV machine with 0.18 nm point-to-point resolution. © 1985.

Original language	English
Pages (from-to)	305-312
Number of pages	8
Journal	Ultramicroscopy
Volume	18
Issue number	1-4
DOIs	https://doi.org/10.1016/0304-3991(85)90148-2
State	Published - Jan 1 1985
Externally published	Yes

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title = "HREM of compound semiconductors",

abstract = "The application of high-resolution electron microscopy to the study of different structures and defects in compound semiconductors is illustrated. The study of epilayers and interfacial dislocations is illustrated for GaAs/AlxGa1-xAs and GaSb/InAs superlattices. A new method for preparing well defined grain boundaries in GaAs is reported together with new observations of defects produced by ion implantation and annealing of GaAs/AlxGa1-xAs superlattices is discussed. A brief comparison is made between simulated images for a conventional 125 kV machine and a 400 kV machine with 0.18 nm point-to-point resolution. {\textcopyright} 1985.",

author = "\{de Cooman\}, \{B. C.\} and Cho, \{N. H.\} and Z. Elgat and Carter, \{C. B.\}",

year = "1985",

month = jan,

day = "1",

doi = "10.1016/0304-3991(85)90148-2",

language = "English",

volume = "18",

pages = "305--312",

journal = "Ultramicroscopy",

issn = "0304-3991",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - HREM of compound semiconductors

AU - de Cooman, B. C.

AU - Cho, N. H.

AU - Elgat, Z.

AU - Carter, C. B.

PY - 1985/1/1

Y1 - 1985/1/1

N2 - The application of high-resolution electron microscopy to the study of different structures and defects in compound semiconductors is illustrated. The study of epilayers and interfacial dislocations is illustrated for GaAs/AlxGa1-xAs and GaSb/InAs superlattices. A new method for preparing well defined grain boundaries in GaAs is reported together with new observations of defects produced by ion implantation and annealing of GaAs/AlxGa1-xAs superlattices is discussed. A brief comparison is made between simulated images for a conventional 125 kV machine and a 400 kV machine with 0.18 nm point-to-point resolution. © 1985.

AB - The application of high-resolution electron microscopy to the study of different structures and defects in compound semiconductors is illustrated. The study of epilayers and interfacial dislocations is illustrated for GaAs/AlxGa1-xAs and GaSb/InAs superlattices. A new method for preparing well defined grain boundaries in GaAs is reported together with new observations of defects produced by ion implantation and annealing of GaAs/AlxGa1-xAs superlattices is discussed. A brief comparison is made between simulated images for a conventional 125 kV machine and a 400 kV machine with 0.18 nm point-to-point resolution. © 1985.

UR - https://www.scopus.com/pages/publications/0022182299

U2 - 10.1016/0304-3991(85)90148-2

DO - 10.1016/0304-3991(85)90148-2

M3 - Article

SN - 0304-3991

VL - 18

SP - 305

EP - 312

JO - Ultramicroscopy

JF - Ultramicroscopy

IS - 1-4

ER -

HREM of compound semiconductors

Abstract

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