I-V characteristics of short superconducting nanowires with different bias and shunt: A dynamic approach

Shizeng Lin; Lev N. Bulaevskii

doi:10.1088/0953-8984/26/15/155703

I-V characteristics of short superconducting nanowires with different bias and shunt: A dynamic approach

Shizeng Lin
, Lev N. Bulaevskii

Los Alamos National Laboratory

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We derived the I-V characteristics of short nanowire in a circuit with and without resistive and inductive shunt. For this we used numerical calculations in the framework of time-dependent Ginzburg-Landau equations with different relaxation times for the amplitude and phase dynamics. We also derived the dependence of the I-V characteristics on flux in a superconducting quantum interference device made of two such weak links.

Original language	English
Article number	155703
Journal	Journal of Physics: Condensed Matter
Volume	26
Issue number	15
DOIs	https://doi.org/10.1088/0953-8984/26/15/155703
State	Published - Apr 16 2014

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title = "I-V characteristics of short superconducting nanowires with different bias and shunt: A dynamic approach",

abstract = "We derived the I-V characteristics of short nanowire in a circuit with and without resistive and inductive shunt. For this we used numerical calculations in the framework of time-dependent Ginzburg-Landau equations with different relaxation times for the amplitude and phase dynamics. We also derived the dependence of the I-V characteristics on flux in a superconducting quantum interference device made of two such weak links.",

author = "Shizeng Lin and Bulaevskii, \{Lev N.\}",

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AU - Lin, Shizeng

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N2 - We derived the I-V characteristics of short nanowire in a circuit with and without resistive and inductive shunt. For this we used numerical calculations in the framework of time-dependent Ginzburg-Landau equations with different relaxation times for the amplitude and phase dynamics. We also derived the dependence of the I-V characteristics on flux in a superconducting quantum interference device made of two such weak links.

AB - We derived the I-V characteristics of short nanowire in a circuit with and without resistive and inductive shunt. For this we used numerical calculations in the framework of time-dependent Ginzburg-Landau equations with different relaxation times for the amplitude and phase dynamics. We also derived the dependence of the I-V characteristics on flux in a superconducting quantum interference device made of two such weak links.

UR - https://www.scopus.com/pages/publications/84903370903

U2 - 10.1088/0953-8984/26/15/155703

DO - 10.1088/0953-8984/26/15/155703

M3 - Article

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VL - 26

JO - Journal of Physics: Condensed Matter

JF - Journal of Physics: Condensed Matter

IS - 15

M1 - 155703

ER -

I-V characteristics of short superconducting nanowires with different bias and shunt: A dynamic approach

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