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III-Nitride nanowires lasers

  • George T. Wang
  • , Changyi Li
  • , Sheng Liu
  • , Jeremy B. Wright
  • , Benjamin Leung
  • , Daniel D. Koleske
  • , Jeffrey J. Figiel
  • , Ting S. Luk
  • , Igal Brener
  • , Ganesh Balakrishnan
  • , Steven R.J. Brueck

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Nanowires have gained interest as coherent, nanoscale light sources. Using a top-down approach, high quality III-nitride-based nanowires with controllable height, pitch and diameter have been realized. Here, the fabrication, and lasing characteristics of GaN-based and GaN/InGaN based nanowires fabricated by this approach will be presented, along with schemes for single optical mode selection, polarization control, beam shaping, and wavelength tuning.
Original languageEnglish
Title of host publication2016 IEEE Photonics Society Summer Topical Meeting Series, SUM 2016
Pages25-26
Number of pages2
DOIs
StatePublished - Aug 22 2016
Externally publishedYes

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