Abstract
Nanowires have gained interest as coherent, nanoscale light sources. Using a top-down approach, high quality III-nitride-based nanowires with controllable height, pitch and diameter have been realized. Here, the fabrication, and lasing characteristics of GaN-based and GaN/InGaN based nanowires fabricated by this approach will be presented, along with schemes for single optical mode selection, polarization control, beam shaping, and wavelength tuning.
| Original language | English |
|---|---|
| Title of host publication | 2016 IEEE Photonics Society Summer Topical Meeting Series, SUM 2016 |
| Pages | 25-26 |
| Number of pages | 2 |
| DOIs | |
| State | Published - Aug 22 2016 |
| Externally published | Yes |
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