Improved a -B10C2+xHy/Si p-n heterojunction performance after neutron irradiation

George Glenn Peterson; Qing Su; Yongqiang Wang; Natale J. Ianno; Peter A. Dowben; Michael Nastasi

doi:10.1116/1.5008999

Improved a -B₁₀C_2+xH_y/Si p-n heterojunction performance after neutron irradiation

George Glenn Peterson
, Qing Su
, Yongqiang Wang
, Natale J. Ianno
, Peter A. Dowben
, Michael Nastasi

Los Alamos National Laboratory

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The impact of neutron irradiation, in the energy range of ∼0.025 eV, on amorphous semiconducting partially dehydrogenated boron carbide (a-B₁₀C₂₊_xH_y) on silicon p-n heterojunction diodes was investigated. The heterojunction devices were created by synthesizing a-B₁₀C₂₊_xH_y via plasma enhanced chemical vapor deposition on n-type silicon. Unlike many electronic devices, the performance of the a-B₁₀C₂_+xH_y heterojunction diode improved with neutron irradiation, in spite of the large neutron cross section of ¹⁰B. There is also increased charge carrier lifetime of more than 200% with modest neutron irradiation of approximately 2.7 × 10⁸ to 1.08 × 10⁹ neutrons/cm².

Original language	English
Article number	011207
Journal	Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Volume	36
Issue number	1
DOIs	https://doi.org/10.1116/1.5008999
State	Published - Jan 1 2018

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title = "Improved a -B10C2+xHy/Si p-n heterojunction performance after neutron irradiation",

abstract = "The impact of neutron irradiation, in the energy range of ∼0.025 eV, on amorphous semiconducting partially dehydrogenated boron carbide (a-B10C2+xHy) on silicon p-n heterojunction diodes was investigated. The heterojunction devices were created by synthesizing a-B10C2+xHy via plasma enhanced chemical vapor deposition on n-type silicon. Unlike many electronic devices, the performance of the a-B10C2+xHy heterojunction diode improved with neutron irradiation, in spite of the large neutron cross section of 10B. There is also increased charge carrier lifetime of more than 200\% with modest neutron irradiation of approximately 2.7 {\texttimes} 108 to 1.08 {\texttimes} 109 neutrons/cm2.",

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T1 - Improved a -B10C2+xHy/Si p-n heterojunction performance after neutron irradiation

AU - Peterson, George Glenn

AU - Su, Qing

AU - Wang, Yongqiang

AU - Ianno, Natale J.

AU - Dowben, Peter A.

AU - Nastasi, Michael

PY - 2018/1/1

Y1 - 2018/1/1

N2 - The impact of neutron irradiation, in the energy range of ∼0.025 eV, on amorphous semiconducting partially dehydrogenated boron carbide (a-B10C2+xHy) on silicon p-n heterojunction diodes was investigated. The heterojunction devices were created by synthesizing a-B10C2+xHy via plasma enhanced chemical vapor deposition on n-type silicon. Unlike many electronic devices, the performance of the a-B10C2+xHy heterojunction diode improved with neutron irradiation, in spite of the large neutron cross section of 10B. There is also increased charge carrier lifetime of more than 200% with modest neutron irradiation of approximately 2.7 × 108 to 1.08 × 109 neutrons/cm2.

AB - The impact of neutron irradiation, in the energy range of ∼0.025 eV, on amorphous semiconducting partially dehydrogenated boron carbide (a-B10C2+xHy) on silicon p-n heterojunction diodes was investigated. The heterojunction devices were created by synthesizing a-B10C2+xHy via plasma enhanced chemical vapor deposition on n-type silicon. Unlike many electronic devices, the performance of the a-B10C2+xHy heterojunction diode improved with neutron irradiation, in spite of the large neutron cross section of 10B. There is also increased charge carrier lifetime of more than 200% with modest neutron irradiation of approximately 2.7 × 108 to 1.08 × 109 neutrons/cm2.

UR - https://www.scopus.com/pages/publications/85040734637

U2 - 10.1116/1.5008999

DO - 10.1116/1.5008999

M3 - Article

SN - 2166-2746

VL - 36

JO - Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics

JF - Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics

IS - 1

M1 - 011207

ER -

Improved a -B10C2+xHy/Si p-n heterojunction performance after neutron irradiation

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Improved a -B₁₀C_2+xH_y/Si p-n heterojunction performance after neutron irradiation