Improved GaAs/AlGaAs quantum-well heterostructures by organometallic vapor-phase epitaxy

C. F. Schaus; J. R. Shealy; L. F. Eastman; B. C. Cooman; C. B. Carter

doi:10.1063/1.336637

Improved GaAs/AlGaAs quantum-well heterostructures by organometallic vapor-phase epitaxy

C. F. Schaus
, J. R. Shealy
, L. F. Eastman
, B. C. Cooman
, C. B. Carter

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

The properties of GaAs/AlGaAs quantum-well heterostructures have been investigated using transmission electron microscopy (TEM) together with photoluminescence. Modifications to the reactor are described which allow abrupt interfaces (∼5 Å) and strong optical emission to be obtained up to 300 K from single layers <40 Å thick. TEM and Raman scattering have been used to characterize heterostructures, which has resulted in an optimized gas handling system for precise control of reactant fluxes in a low-pressure apparatus. The effects of pressure transients, gas-flow recirculation, and residual aluminum incorporation in thin GaAs films grown over AlGaAs are presented.

Original language	English
Pages (from-to)	678-680
Number of pages	3
Journal	Journal of Applied Physics
Volume	59
Issue number	2
DOIs	https://doi.org/10.1063/1.336637
State	Published - Dec 1 1986
Externally published	Yes

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title = "Improved GaAs/AlGaAs quantum-well heterostructures by organometallic vapor-phase epitaxy",

abstract = "The properties of GaAs/AlGaAs quantum-well heterostructures have been investigated using transmission electron microscopy (TEM) together with photoluminescence. Modifications to the reactor are described which allow abrupt interfaces (∼5 {\AA}) and strong optical emission to be obtained up to 300 K from single layers <40 {\AA} thick. TEM and Raman scattering have been used to characterize heterostructures, which has resulted in an optimized gas handling system for precise control of reactant fluxes in a low-pressure apparatus. The effects of pressure transients, gas-flow recirculation, and residual aluminum incorporation in thin GaAs films grown over AlGaAs are presented.",

author = "Schaus, \{C. F.\} and Shealy, \{J. R.\} and Eastman, \{L. F.\} and Cooman, \{B. C.\} and Carter, \{C. B.\}",

year = "1986",

month = dec,

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doi = "10.1063/1.336637",

language = "English",

volume = "59",

pages = "678--680",

journal = "Journal of Applied Physics",

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publisher = "American Institute of Physics",

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TY - JOUR

T1 - Improved GaAs/AlGaAs quantum-well heterostructures by organometallic vapor-phase epitaxy

AU - Schaus, C. F.

AU - Shealy, J. R.

AU - Eastman, L. F.

AU - Cooman, B. C.

AU - Carter, C. B.

PY - 1986/12/1

Y1 - 1986/12/1

N2 - The properties of GaAs/AlGaAs quantum-well heterostructures have been investigated using transmission electron microscopy (TEM) together with photoluminescence. Modifications to the reactor are described which allow abrupt interfaces (∼5 Å) and strong optical emission to be obtained up to 300 K from single layers <40 Å thick. TEM and Raman scattering have been used to characterize heterostructures, which has resulted in an optimized gas handling system for precise control of reactant fluxes in a low-pressure apparatus. The effects of pressure transients, gas-flow recirculation, and residual aluminum incorporation in thin GaAs films grown over AlGaAs are presented.

AB - The properties of GaAs/AlGaAs quantum-well heterostructures have been investigated using transmission electron microscopy (TEM) together with photoluminescence. Modifications to the reactor are described which allow abrupt interfaces (∼5 Å) and strong optical emission to be obtained up to 300 K from single layers <40 Å thick. TEM and Raman scattering have been used to characterize heterostructures, which has resulted in an optimized gas handling system for precise control of reactant fluxes in a low-pressure apparatus. The effects of pressure transients, gas-flow recirculation, and residual aluminum incorporation in thin GaAs films grown over AlGaAs are presented.

UR - https://www.scopus.com/pages/publications/0022593995

U2 - 10.1063/1.336637

DO - 10.1063/1.336637

M3 - Article

SN - 0021-8979

VL - 59

SP - 678

EP - 680

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 2

ER -

Improved GaAs/AlGaAs quantum-well heterostructures by organometallic vapor-phase epitaxy

Abstract

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