Improved InGaN LED efficiency using photonic crystal patterning and surface plasmon enhanced emission

A. J. Fischer; G. Subramania; Y. J. Lee; T. S. Luk; J. R. Wendt; D. D. Koleske

doi:10.1149/1.2913075

Improved InGaN LED efficiency using photonic crystal patterning and surface plasmon enhanced emission

A. J. Fischer
, G. Subramania
, Y. J. Lee
, T. S. Luk
, J. R. Wendt
, D. D. Koleske

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

Surface plasmon mediated emission can improve the efficiency of light emitting diodes (LEDs) by coupling excited carriers to surface plasmon modes. By combining surface plasmon effects with photonic crystal patterning it is possible to enhance the internal quantum efficiency as well as the light extraction efficiency of blue and green InGaN LEDs. Time-resolved and time-integrated photoluminescence measurements are used to show that surface plasmons can enhance the radiative decay rate as well as the overall total luminescence for a properly designed sample. Our design for a practical, electrically injected InGaN surface plasmon LED will be presented. ©The Electrochemical Society.

Original language	English
Title of host publication	ECS Transactions
Pages	5-11
Number of pages	7
Volume	13
Edition	3
DOIs	https://doi.org/10.1149/1.2913075
State	Published - Nov 17 2008
Externally published	Yes

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@inproceedings{18d3196b06b3402f90d7b7af78ff10be,

title = "Improved InGaN LED efficiency using photonic crystal patterning and surface plasmon enhanced emission",

abstract = "Surface plasmon mediated emission can improve the efficiency of light emitting diodes (LEDs) by coupling excited carriers to surface plasmon modes. By combining surface plasmon effects with photonic crystal patterning it is possible to enhance the internal quantum efficiency as well as the light extraction efficiency of blue and green InGaN LEDs. Time-resolved and time-integrated photoluminescence measurements are used to show that surface plasmons can enhance the radiative decay rate as well as the overall total luminescence for a properly designed sample. Our design for a practical, electrically injected InGaN surface plasmon LED will be presented. {\textcopyright}The Electrochemical Society.",

author = "Fischer, \{A. J.\} and G. Subramania and Lee, \{Y. J.\} and Luk, \{T. S.\} and Wendt, \{J. R.\} and Koleske, \{D. D.\}",

year = "2008",

month = nov,

day = "17",

doi = "10.1149/1.2913075",

language = "English",

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volume = "13",

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TY - GEN

T1 - Improved InGaN LED efficiency using photonic crystal patterning and surface plasmon enhanced emission

AU - Fischer, A. J.

AU - Subramania, G.

AU - Lee, Y. J.

AU - Luk, T. S.

AU - Wendt, J. R.

AU - Koleske, D. D.

PY - 2008/11/17

Y1 - 2008/11/17

N2 - Surface plasmon mediated emission can improve the efficiency of light emitting diodes (LEDs) by coupling excited carriers to surface plasmon modes. By combining surface plasmon effects with photonic crystal patterning it is possible to enhance the internal quantum efficiency as well as the light extraction efficiency of blue and green InGaN LEDs. Time-resolved and time-integrated photoluminescence measurements are used to show that surface plasmons can enhance the radiative decay rate as well as the overall total luminescence for a properly designed sample. Our design for a practical, electrically injected InGaN surface plasmon LED will be presented. ©The Electrochemical Society.

AB - Surface plasmon mediated emission can improve the efficiency of light emitting diodes (LEDs) by coupling excited carriers to surface plasmon modes. By combining surface plasmon effects with photonic crystal patterning it is possible to enhance the internal quantum efficiency as well as the light extraction efficiency of blue and green InGaN LEDs. Time-resolved and time-integrated photoluminescence measurements are used to show that surface plasmons can enhance the radiative decay rate as well as the overall total luminescence for a properly designed sample. Our design for a practical, electrically injected InGaN surface plasmon LED will be presented. ©The Electrochemical Society.

UR - https://www.scopus.com/pages/publications/55849118466

U2 - 10.1149/1.2913075

DO - 10.1149/1.2913075

M3 - Conference contribution

SN - 9781566776288

VL - 13

SP - 5

EP - 11

BT - ECS Transactions

ER -

Improved InGaN LED efficiency using photonic crystal patterning and surface plasmon enhanced emission

Abstract

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