Abstract
A way for mitigating internal electric field effects and improving optical performance of AlGaN quantum wells was analyzed. The model used was based on determining the quantum-well bandstructure through an iterative solution of k . p Hamiltonian and Poisson equation. The bandstructure results were used in a spontaneous emission calculation, where many-body Coulomb effects were included within the framework of the Padé approximation and quasiequilibrium condition was assumed. It was found that for low aluminium concentration, the heavy-hole band was the lowest hole band in the quantum well.
| Original language | English |
|---|---|
| Title of host publication | Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS |
| Pages | 23-24 |
| Number of pages | 2 |
| Volume | 1 |
| State | Published - Dec 1 2004 |
| Externally published | Yes |
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