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Impurity elements study of carbon nanotubes fabricated by chemical vapor deposition

  • I. O. Usov
  • , Y. Q. Wang
  • , Q. Li
  • , Y. T. Zhu
  • , R. F. DePaula
  • , P. N. Arendt

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

It is widely known that materials properties are very sensitive to the presence of impurity elements. In this study we performed Rutherford backscattering spectroscopy (RBS) and particle induced X-ray emission (PIXE) analysis of impurity elements in carbon nanotubes (CNTs) fabricated by chemical vapor deposition. Impurities such as O, Si, P, S, Cl, Ar, Ti, Cr and Fe were found. The O was uniformly distributed and the most abundant impurity in CNTs. Sources of contamination were investigated and it was suggested that the presence of Si, S, Cl, Ti and Cr can be eliminated.

Original languageEnglish
Pages (from-to)574-577
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume261
Issue number1-2 SPEC. ISS.
DOIs
StatePublished - Aug 1 2007

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