In-situ regrowth of GaAs through controlled phase transformations and reactions of thin films on GaAs

D. A. Caldwell; L. C. Chen; A. H. Bensaoula; J. K. Farrer; C. B. Carter; C. J. Palmstrom

In-situ regrowth of GaAs through controlled phase transformations and reactions of thin films on GaAs

D. A. Caldwell
, L. C. Chen
, A. H. Bensaoula
, J. K. Farrer
, C. B. Carter
, C. J. Palmstrom

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

In-situ depositions and reactions are utilized in the study of phase formation from solid phase reactions. We report on the formation of epitaxial GaAs and the formation of NiAs or Ni2Ga3 by the exposure of Ni3GaAs to As4 or Ga fluxes. In-situ annealing of Ni on MBE-grown GaAs leads to Ni3GaAs, and subsequent reaction with As4 or Ga drives regrowth of GaAs. The structures were analyzed by RBS, XRD, TEM, and in-situ electrical measurements.

Original language	English
Title of host publication	Materials Research Society Symposium - Proceedings
Pages	455-460
Number of pages	6
Volume	514
State	Published - Dec 1 1998
Externally published	Yes

Cite this

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title = "In-situ regrowth of GaAs through controlled phase transformations and reactions of thin films on GaAs",

abstract = "In-situ depositions and reactions are utilized in the study of phase formation from solid phase reactions. We report on the formation of epitaxial GaAs and the formation of NiAs or Ni2Ga3 by the exposure of Ni3GaAs to As4 or Ga fluxes. In-situ annealing of Ni on MBE-grown GaAs leads to Ni3GaAs, and subsequent reaction with As4 or Ga drives regrowth of GaAs. The structures were analyzed by RBS, XRD, TEM, and in-situ electrical measurements.",

author = "Caldwell, \{D. A.\} and Chen, \{L. C.\} and Bensaoula, \{A. H.\} and Farrer, \{J. K.\} and Carter, \{C. B.\} and Palmstrom, \{C. J.\}",

year = "1998",

month = dec,

day = "1",

language = "English",

volume = "514",

pages = "455--460",

booktitle = "Materials Research Society Symposium - Proceedings",

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T1 - In-situ regrowth of GaAs through controlled phase transformations and reactions of thin films on GaAs

AU - Caldwell, D. A.

AU - Chen, L. C.

AU - Bensaoula, A. H.

AU - Farrer, J. K.

AU - Carter, C. B.

AU - Palmstrom, C. J.

PY - 1998/12/1

Y1 - 1998/12/1

N2 - In-situ depositions and reactions are utilized in the study of phase formation from solid phase reactions. We report on the formation of epitaxial GaAs and the formation of NiAs or Ni2Ga3 by the exposure of Ni3GaAs to As4 or Ga fluxes. In-situ annealing of Ni on MBE-grown GaAs leads to Ni3GaAs, and subsequent reaction with As4 or Ga drives regrowth of GaAs. The structures were analyzed by RBS, XRD, TEM, and in-situ electrical measurements.

AB - In-situ depositions and reactions are utilized in the study of phase formation from solid phase reactions. We report on the formation of epitaxial GaAs and the formation of NiAs or Ni2Ga3 by the exposure of Ni3GaAs to As4 or Ga fluxes. In-situ annealing of Ni on MBE-grown GaAs leads to Ni3GaAs, and subsequent reaction with As4 or Ga drives regrowth of GaAs. The structures were analyzed by RBS, XRD, TEM, and in-situ electrical measurements.

UR - https://www.scopus.com/pages/publications/0032289143

M3 - Conference contribution

VL - 514

SP - 455

EP - 460

BT - Materials Research Society Symposium - Proceedings

ER -

In-situ regrowth of GaAs through controlled phase transformations and reactions of thin films on GaAs

Abstract

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