Incoherent twin boundary migration induced by ion irradiation in Cu

Grain boundaries can act as sinks for radiation-induced point defects. The sink capability is dependent on the atomic structures and varies with the type of point defects. Using high-resolution transmission electron microscopy, we observed that Σ3{112} incoherent twin boundary (ITB) in Cu films migrates under Cu³⁺ ion irradiation. Using atomistic modeling, we found that Σ3{112} ITB has the preferred sites for adsorbing interstitials and the preferential diffusion channels along the Shockley partial dislocations. Coupling with the high mobility of grain boundary Shockley dislocations within Σ3{112} ITB, we infer that Σ3{112} ITB migrates through the collective glide of grain boundary Shockley dislocations, driven by a concurrent reduction in the density of radiation-induced defects, which is demonstrated by the distribution of nearby radiation-induced defects.