Abstract
This study investigates the brightness enhancement of silicon-vacancy (SiV) centers in diamond through UV irradiation during post-implantation annealing. Results show a 15% increase in photoluminescence brightness, attributed to improved SiV formation due to reduced divacancy density, suggesting potential for optimized manufacturing of single defect sites for quantum applications.
| Original language | English |
|---|---|
| Pages (from-to) | 1208-1209 |
| Number of pages | 2 |
| Journal | International Conference on Metamaterials, Photonic Crystals and Plasmonics |
| State | Published - 2025 |
| Externally published | Yes |
| Event | 15th International Conference on Metamaterials, Photonic Crystals and Plasmonics, META 2025 - Malaga, Spain Duration: Jul 22 2025 → Jul 25 2025 |
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