Influence of quantum-well-barrier composition on gain and threshold current in AlGaN lasers

W. W. Chow; M. Kneissl; J. E. Northrup; N. M. Johnson

doi:10.1063/1.2679969

Influence of quantum-well-barrier composition on gain and threshold current in AlGaN lasers

W. W. Chow
, M. Kneissl
, J. E. Northrup
, N. M. Johnson

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

In an AlGaN quantum-well laser, the presence of Al affects the optical properties of the gain-generating active region partly because of the distinct difference in the band structure between AlN and GaN or InN. The intricate connection between band structure and internal-electric-field effects leads to a noticeably stronger influence of barrier composition on optical gain, lasing polarization, and threshold current than in conventional near-infrared III-V lasers. © 2007 American Institute of Physics.

Original language	English
Journal	Applied Physics Letters
Volume	90
Issue number	10
DOIs	https://doi.org/10.1063/1.2679969
State	Published - Mar 16 2007
Externally published	Yes

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title = "Influence of quantum-well-barrier composition on gain and threshold current in AlGaN lasers",

abstract = "In an AlGaN quantum-well laser, the presence of Al affects the optical properties of the gain-generating active region partly because of the distinct difference in the band structure between AlN and GaN or InN. The intricate connection between band structure and internal-electric-field effects leads to a noticeably stronger influence of barrier composition on optical gain, lasing polarization, and threshold current than in conventional near-infrared III-V lasers. {\textcopyright} 2007 American Institute of Physics.",

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AU - Chow, W. W.

AU - Kneissl, M.

AU - Northrup, J. E.

AU - Johnson, N. M.

PY - 2007/3/16

Y1 - 2007/3/16

N2 - In an AlGaN quantum-well laser, the presence of Al affects the optical properties of the gain-generating active region partly because of the distinct difference in the band structure between AlN and GaN or InN. The intricate connection between band structure and internal-electric-field effects leads to a noticeably stronger influence of barrier composition on optical gain, lasing polarization, and threshold current than in conventional near-infrared III-V lasers. © 2007 American Institute of Physics.

AB - In an AlGaN quantum-well laser, the presence of Al affects the optical properties of the gain-generating active region partly because of the distinct difference in the band structure between AlN and GaN or InN. The intricate connection between band structure and internal-electric-field effects leads to a noticeably stronger influence of barrier composition on optical gain, lasing polarization, and threshold current than in conventional near-infrared III-V lasers. © 2007 American Institute of Physics.

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U2 - 10.1063/1.2679969

DO - 10.1063/1.2679969

M3 - Article

SN - 0003-6951

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

ER -

Influence of quantum-well-barrier composition on gain and threshold current in AlGaN lasers

Abstract

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