Influence of SrTiO3 substrate miscut angle on the transport properties of LaAlO3/SrTiO3 interfaces

T. Fix; F. Schoofs; Z. Bi; A. Chen; H. Wang; J. L. MacManus-Driscoll; M. G. Blamire

doi:10.1063/1.3609785

Influence of SrTiO₃ substrate miscut angle on the transport properties of LaAlO₃/SrTiO₃ interfaces

T. Fix
, F. Schoofs
, Z. Bi
, A. Chen
, H. Wang
, J. L. MacManus-Driscoll
, M. G. Blamire

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

A free charge layer forms at the LaAlO₃/SrTiO₃ interface. We show the influence of the SrTiO₃ (001) substrate miscut angle on its electronic and transport properties. Highly miscut substrates lead to a substantial mobility enhancement and a carrier density decrease at low temperature consistent with a two-carrier type model.

Original language	English
Article number	022103
Journal	Applied Physics Letters
Volume	99
Issue number	2
DOIs	https://doi.org/10.1063/1.3609785
State	Published - Jul 11 2011
Externally published	Yes

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10.1063/1.3609785

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title = "Influence of SrTiO3 substrate miscut angle on the transport properties of LaAlO3/SrTiO3 interfaces",

abstract = "A free charge layer forms at the LaAlO3/SrTiO3 interface. We show the influence of the SrTiO3 (001) substrate miscut angle on its electronic and transport properties. Highly miscut substrates lead to a substantial mobility enhancement and a carrier density decrease at low temperature consistent with a two-carrier type model.",

author = "T. Fix and F. Schoofs and Z. Bi and A. Chen and H. Wang and MacManus-Driscoll, \{J. L.\} and Blamire, \{M. G.\}",

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T1 - Influence of SrTiO3 substrate miscut angle on the transport properties of LaAlO3/SrTiO3 interfaces

AU - Fix, T.

AU - Schoofs, F.

AU - Bi, Z.

AU - Chen, A.

AU - Wang, H.

AU - MacManus-Driscoll, J. L.

AU - Blamire, M. G.

PY - 2011/7/11

Y1 - 2011/7/11

N2 - A free charge layer forms at the LaAlO3/SrTiO3 interface. We show the influence of the SrTiO3 (001) substrate miscut angle on its electronic and transport properties. Highly miscut substrates lead to a substantial mobility enhancement and a carrier density decrease at low temperature consistent with a two-carrier type model.

AB - A free charge layer forms at the LaAlO3/SrTiO3 interface. We show the influence of the SrTiO3 (001) substrate miscut angle on its electronic and transport properties. Highly miscut substrates lead to a substantial mobility enhancement and a carrier density decrease at low temperature consistent with a two-carrier type model.

UR - https://www.scopus.com/pages/publications/79960552169

U2 - 10.1063/1.3609785

DO - 10.1063/1.3609785

M3 - Article

SN - 0003-6951

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

M1 - 022103

ER -

Influence of SrTiO3 substrate miscut angle on the transport properties of LaAlO3/SrTiO3 interfaces

Abstract

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Influence of SrTiO₃ substrate miscut angle on the transport properties of LaAlO₃/SrTiO₃ interfaces