InGaN quantum dots for high efficiency blue and green light emitters

Arthur J. Fischer; Xiaoyin Xiao; Jeffrey Y. Tsao; Daniel D. Koleske; Ping Lu; Jeremy B. Wright; Sheng Liu; George T. Wang

InGaN quantum dots for high efficiency blue and green light emitters

Arthur J. Fischer
, Xiaoyin Xiao
, Jeffrey Y. Tsao
, Daniel D. Koleske
, Ping Lu
, Jeremy B. Wright
, Sheng Liu
, George T. Wang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

InGaN quantum dots at high densities (∼1011 dots/cm2) are demonstrated using metalorganic chemical vapor deposition combined with post growth processing of InGaN materials. Optical and structural studies are performed to characterize InGaN quantum dots.

Original language	English
Title of host publication	Conference on Lasers and Electro-Optics Europe - Technical Digest
Volume	2014-January
State	Published - Jan 1 2014
Externally published	Yes

Cite this

@inproceedings{494db41d43bb4fb9b5571f1c2254ceba,

title = "InGaN quantum dots for high efficiency blue and green light emitters",

abstract = "InGaN quantum dots at high densities (∼1011 dots/cm2) are demonstrated using metalorganic chemical vapor deposition combined with post growth processing of InGaN materials. Optical and structural studies are performed to characterize InGaN quantum dots.",

author = "Fischer, \{Arthur J.\} and Xiaoyin Xiao and Tsao, \{Jeffrey Y.\} and Koleske, \{Daniel D.\} and Ping Lu and Wright, \{Jeremy B.\} and Sheng Liu and Wang, \{George T.\}",

year = "2014",

month = jan,

day = "1",

language = "English",

volume = "2014-January",

booktitle = "Conference on Lasers and Electro-Optics Europe - Technical Digest",

}

TY - GEN

T1 - InGaN quantum dots for high efficiency blue and green light emitters

AU - Fischer, Arthur J.

AU - Xiao, Xiaoyin

AU - Tsao, Jeffrey Y.

AU - Koleske, Daniel D.

AU - Lu, Ping

AU - Wright, Jeremy B.

AU - Liu, Sheng

AU - Wang, George T.

PY - 2014/1/1

Y1 - 2014/1/1

N2 - InGaN quantum dots at high densities (∼1011 dots/cm2) are demonstrated using metalorganic chemical vapor deposition combined with post growth processing of InGaN materials. Optical and structural studies are performed to characterize InGaN quantum dots.

AB - InGaN quantum dots at high densities (∼1011 dots/cm2) are demonstrated using metalorganic chemical vapor deposition combined with post growth processing of InGaN materials. Optical and structural studies are performed to characterize InGaN quantum dots.

UR - https://www.scopus.com/pages/publications/84944710116

M3 - Conference contribution

VL - 2014-January

BT - Conference on Lasers and Electro-Optics Europe - Technical Digest

ER -

InGaN quantum dots for high efficiency blue and green light emitters

Abstract

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