Abstract
InGaN quantum dots at high densities (~1011 dots/cm2) are demonstrated using metalorganic chemical vapor deposition combined with post growth processing of InGaN materials. Optical and structural studies are performed to characterize InGaN quantum dots. © 2014 OSA.
| Original language | English |
|---|---|
| Title of host publication | Optics InfoBase Conference Papers |
| DOIs | |
| State | Published - Jan 1 2014 |
| Externally published | Yes |
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